Datasheet > IIPW60R165CP

IIPW60R165CP

更新时间： 2024-09-15 01:14:31

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	335K
描述
N-Channel MOSFET Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IIPW60R165CP 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IPW60R125C6

IIPW60R125C6

·FEATURES

·Static drain-source on-resistance:

RDS(on)≤125mΩ

·Enhancement mode:

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Fast switching

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

P_D

219

℃

150

T_j

-55~150

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(j-c)

PARAMETER

MAX

UNIT

Channel-to-case thermal resistance

℃/W

0.57

Channel-to-ambient thermal resistance

Rth(j-a)

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

中文翻译

下载PDF

与IIPW60R165CP相关器件

型号	品牌	获取价格	描述	数据表
IIPW60R180C7	ISC	获取价格	N-Channel MOSFET Transistor
IIPW60R190C6	ISC	获取价格	N-Channel MOSFET Transistor
IIPW60R199CP	ISC	获取价格	N-Channel MOSFET Transistor
IIPW60R250CP	ISC	获取价格	N-Channel MOSFET Transistor
IIPW60R330P6	ISC	获取价格	N-Channel MOSFET Transistor
IIPW65R037C6	ISC	获取价格	N-Channel MOSFET Transistor
IIPW65R041CFD	ISC	获取价格	N-Channel MOSFET Transistor
IIPW65R065C7	ISC	获取价格	N-Channel MOSFET Transistor
IIPW65R080CFD	ISC	获取价格	N-Channel MOSFET Transistor
IIPW65R095C7	ISC	获取价格	N-Channel MOSFET Transistor