INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IPP65R225C7,IIPP65R225C7
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.225Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Provide all benefits of a fast switching super junction MOSFET
offering better efficiency,reduced gate charge,easy implementation
and outstanding reliability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
650
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
11
V
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
A
IDM
41
A
PD
63
W
℃
℃
150
Tj
-55~150
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
Rth(ch-c)
Rth(ch-a)
PARAMETER
MAX
UNIT
Channel-to-case thermal resistance
℃/W
℃/W
1.99
62
Channel-to-ambient thermal resistance
1
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