Datasheet > IIPP060N06N

IIPP060N06N

更新时间： 2024-09-10 01:17:15

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	337K
描述
isc N-Channel MOSFET Transistor

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数据手册

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IIPP060N06N 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IPP060N06N，IIPP060N06N

·FEATURES

·Static drain-source on-resistance:

RDS(on) ≤6.0mΩ

·Enhancement mode

·Fast Switching Speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·reliable device for use in a wide variety of applications

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

180

P_D

℃

175

T_j

-55~175

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(ch-c)

Rth(ch-a)

PARAMETER

MAX

UNIT

℃/W

Channel-to-case thermal resistance

1.8

Channel-to-ambient thermal resistance

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

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