型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IHW15N120R3FKSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLA | |
IHW15T120 | INFINEON |
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IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE dio | |
IHW20N120R | INFINEON |
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Reverse Conducting IGBT with monolithic body diode | |
IHW20N120R2 | INFINEON |
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Reverse Conducting IGBT with monolithic body diode | |
IHW20N120R3 | INFINEON |
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Reverse conducting IGBT with monolithic body diode | |
IHW20N120R3_15 | INFINEON |
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Material Content Data Sheet | |
IHW20N120R3FKSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLA | |
IHW20N120R5 | INFINEON |
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IGBT RC Soft Switching | |
IHW20N120R5XKSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, P | |
IHW20N135R3 | INFINEON |
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Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel, TO-247, GREEN, PLA |