Datasheet > IGD10N65T6

IGD10N65T6

更新时间： 2024-09-17 11:15:55

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
13页	3336K
描述
IGBT TRENCHSTOP™ 6

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中文翻译

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数据手册

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IGD10N65T6 数据手册

IGD10N65T6

TRENCHSTOP™ꢀIGBT6

IGBTꢀinꢀtrenchꢀandꢀfield-stopꢀtechnology

ꢀ

FeaturesꢀandꢀBenefits:

•ꢀVeryꢀlowꢀV_CE(sat)ꢀ1.5Vꢀ(typ.)

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C

•ꢀShortꢀcircuitꢀwithstandꢀtimeꢀ3µs

Trenchꢀandꢀfield-stopꢀtechnologyꢀforꢀ650Vꢀapplicationsꢀoffersꢀ:

ꢀꢀꢀ•ꢀveryꢀtightꢀparameterꢀdistribution

ꢀꢀꢀ•ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior

ꢀꢀꢀ•ꢀlowꢀV_CEsatꢀandꢀpositiveꢀtemperatureꢀcoefficient

•ꢀLowꢀgateꢀchargeꢀQ_G

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPLECSꢀModels:

www.infineon.com/igbt

PotentialꢀApplications:

Drives

ꢀꢀ•ꢀGPDꢀ(generalꢀpurposeꢀdrives)

Majorꢀhomeꢀappliances

ꢀꢀ•ꢀAirꢀconditioning

ꢀꢀ•ꢀOtherꢀmajorꢀhomeꢀappliances

Smallꢀhomeꢀappliances

ꢀꢀ•ꢀOtherꢀsmallꢀhomeꢀappliances

ProductꢀValidation:

Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀto

theꢀrelevantꢀtestsꢀofꢀJEDEC47/20/22

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_CE

I_C

V_CEsat,ꢀT_vj=25°C T_vjmax

1.5V 175°C

Marking

Package

IGD10N65T6

650V

10A

G10ET6

PG-TO252-3

Datasheet

www.infineon.com

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument

Vꢀ2.3

2020-04-29

12 3 4 5 6 7...13

中文翻译

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