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IDW30G65C5 PDF预览

IDW30G65C5

更新时间： 2024-11-18 11:59:03
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
2页 417K
描述
650V SiC thinQ!™ Generation 5 diodes

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中文翻译

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IDW30G65C5 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-247
包装说明：GREEN, PLASTIC PACKAGE-3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：1.97
其他特性：HIGH RELIABILITY应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON CARBIDE二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.7 VJEDEC-95代码：TO-247
JESD-30 代码：R-PSFM-T3最大非重复峰值正向电流：1106 A
元件数量：1相数：1
端子数量：3最高工作温度：175 °C
最低工作温度：-55 °C最大输出电流：30 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：150 W最大重复峰值反向电压：650 V
最大反向电流：220 µA表面贴装：NO
技术：SCHOTTKY端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

IDW30G65C5 数据手册

 浏览型号IDW30G65C5的Datasheet PDF文件第2页 
Product Brief  
Features  
„
Vbr at 650V  
650V SiC thinQ!™ Generation 5 diodes  
„
Improved Figure of Merit (Qc x Vf)  
Your way is our way: improve efficiency and solution costs  
„
No reverse recovery charge  
„
Soft switching reverse  
recovery waveform  
„
Temperature independent  
ThinQ!™ Generation 5 represents Infineon’s leading edge technology for  
SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering  
process, already introduced with G3, is now combined with a new, more  
compact design and thin wafer technology. The result is a new family of  
products showing improved efficiency over all load conditions, coming from  
switching behavior  
„
High operating temperature  
(Tj max 175°C)  
„
Improved surge capability  
„
Pb-free lead plating  
„
10 years manufacturing of SiC diodes  
both the improved thermal characteristics and a lower figure of merit (Qc x Vf)  
.
Benefits  
The new thinQ!™ Generation 5 has been designed to complement our 650V  
CoolMOS™ families: this ensures meeting the most stringent application  
requirements in this voltage range.  
„
Higher safety margin against  
Overvoltage; best match with  
CoolMOS™ 650V products  
„
Improved efficiency over all  
98.5  
load conditions  
a)  
„
Increased efficiency compared to  
Silicon Diode alternatives  
98.0  
„
Reduced EMI compared to snappier  
Silicon diode reverse recovery  
waveform  
Generation 5  
Generation 3  
Generation 2  
97.5  
„
Highly stable switching performance  
„
Reduced cooling requirements  
97.0  
10%  
20%  
30%  
40%  
50%  
60%  
70%  
80%  
90%  
100%  
„
Reduced risks of thermal runaway  
Output Power [% nominal]  
„
RoHS compliant  
0.15  
0.10  
b)  
„
High quality know-how and capacity  
in SiC diode manufacture  
Generation 5  
Generation 3  
Generation 2  
Experimental results  
0.05  
Efficiency comparison among the three  
IFX generations of 8A SiC diodes  
a) Absolute values  
Applications  
„
0.00  
Telecom/Server SMPS  
b) Referred to thinQ!™ Gen 5  
„
Solar/UPS  
- 0.05  
- 0.10  
- 0.15  
„
PC Silverbox  
(CCM PFC, High line, Pout max=1800 W,  
fSW=65 kHz, THS=60°C,  
„
LED/LCD TV  
MOSFET: IPW60R075CP)  
„
Motor Drives  
100%  
10%  
20%  
30%  
40%  
50%  
60%  
70%  
80%  
90%  
Output Power [% nominal]  
„
HID lighting  
www.infineon.com/sic  
12

中文翻译

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