IDW20G65C5

更新时间： 2024-11-18 12:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
2页	417K
描述
650V SiC thinQ!â¢ Generation 5 diodes

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IDW20G65C5 数据手册

Product Brief

Features

V_brat 650V

650V SiC thinQ!™ Generation 5 diodes

Improved Figure of Merit (Q_cx V_f)

Your way is our way: improve eﬃciency and solution costs

No reverse recovery charge

Soft switching reverse

recovery waveform

Temperature independent

ThinQ!™ Generation 5 represents Inﬁneon’s leading edge technology for

SiC Schottky Barrier diodes. The Inﬁneon proprietary diﬀusion soldering

process, already introduced with G3, is now combined with a new, more

compact design and thin wafer technology. The result is a new family of

products showing improved eﬃciency over all load conditions, coming from

switching behavior

High operating temperature

(T_{j max}175°C)

Improved surge capability

Pb-free lead plating

10 years manufacturing of SiC diodes

both the improved thermal characteristics and a lower ﬁgure of merit (Q_cx V_f)

Beneﬁts

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

Higher safety margin against

Overvoltage; best match with

CoolMOS™ 650V products

Improved eﬃciency over all

98.5

load conditions

Increased eﬃciency compared to

Silicon Diode alternatives

98.0

Reduced EMI compared to snappier

Silicon diode reverse recovery

waveform

Generation 5

Generation 3

Generation 2

97.5

Highly stable switching performance

Reduced cooling requirements

97.0

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

Reduced risks of thermal runaway

Output Power [% nominal]

RoHS compliant

0.15

0.10

High quality know-how and capacity

in SiC diode manufacture

Generation 5

Generation 3

Generation 2

Experimental results

0.05

Eﬃciency comparison among the three

IFX generations of 8A SiC diodes

a) Absolute values

Applications

0.00

Telecom/Server SMPS

b) Referred to thinQ!™ Gen 5

Solar/UPS

- 0.05

- 0.10

- 0.15

PC Silverbox

(CCM PFC, High line, Pout max=1800 W,

f_SW=65 kHz, T_HS=60°C,

LED/LCD TV

MOSFET: IPW60R075CP)

Motor Drives

100%

10%

20%

30%

40%

50%

60%

70%

80%

90%

Output Power [% nominal]

HID lighting

www.inﬁneon.com/sic

中文翻译

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与IDW20G65C5相关器件

型号	品牌	获取价格	描述	数据表
IDW20G65C5_12	INFINEON	获取价格	ThinQ!â¢ Generation 5 represents Infineon le
IDW20G65C5B	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 650V V(RRM), Silicon Carbide, TO-247,
IDW20G65C5BXKSA1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 650V V(RRM), Silicon Carbide, TO-247,
IDW20G65C5FKSA1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 40A, 650V V(RRM), Silicon Carbide, TO-247,
IDW20G65C5XKSA1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 650V V(RRM), Silicon Carbide, TO-247,
IDW20S120FKSA1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-247,
IDW24G65C5B	INFINEON	获取价格	650V SiC Schottky Diode
IDW24G65C5B_15	INFINEON	获取价格	650V SiC Schottky Diode
IDW30C65D1	INFINEON	获取价格	Rapid 1 650 V 开关,?30 A发射极控制?硅二极管具有TO-247 封装和
IDW30E60	INFINEON	获取价格	600 V, 30 A 发射极控制硅二极管具有 TO-247 封装，主要为高达 30kH

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