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IDT7280L20JB PDF预览

IDT7280L20JB

更新时间: 2024-01-05 11:30:00
品牌 Logo 应用领域
艾迪悌 - IDT 先进先出芯片
页数 文件大小 规格书
14页 143K
描述
FIFO, 256X9, 20ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32

IDT7280L20JB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.83
最长访问时间:20 nsJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:2304 bit内存宽度:9
湿度敏感等级:1功能数量:1
端子数量:32字数:256 words
字数代码:256工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256X9可输出:NO
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):225
认证状态:Not Qualified筛选级别:MIL-STD-883 Class B
座面最大高度:3.55 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:20
宽度:11.43 mmBase Number Matches:1

IDT7280L20JB 数据手册

 浏览型号IDT7280L20JB的Datasheet PDF文件第2页浏览型号IDT7280L20JB的Datasheet PDF文件第3页浏览型号IDT7280L20JB的Datasheet PDF文件第4页浏览型号IDT7280L20JB的Datasheet PDF文件第5页浏览型号IDT7280L20JB的Datasheet PDF文件第6页浏览型号IDT7280L20JB的Datasheet PDF文件第7页 
CMOS ASYNCHRONOUS FIFO  
256 x 9, 512 x 9 and 1,024 x 9  
IDT7200L  
IDT7201LA  
IDT7202LA  
FEATURES:  
DESCRIPTION:  
First-In/First-Out dual-port memory  
256 x 9 organization (IDT7200)  
512 x 9 organization (IDT7201)  
1,024 x 9 organization (IDT7202)  
Low power consumption  
TheIDT7200/7201/7202aredual-portmemoriesthatloadandemptydata  
onafirst-in/first-outbasis. ThedevicesuseFullandEmptyflagstopreventdata  
overflowandunderflowandexpansionlogictoallowforunlimitedexpansion  
capabilityinbothwordsizeanddepth.  
The reads and writes are internally sequential through the use of ring  
pointers,withnoaddressinformationrequiredtoloadandunloaddata. Data  
istoggledinandoutofthedevicesthroughtheuseoftheWrite(W)andRead  
(R) pins.  
Thedevicesutilizea9-bitwidedataarraytoallowforcontrolandparitybits  
attheusersoption. Thisfeatureisespeciallyusefulindatacommunications  
applicationswhereitisnecessarytouseaparitybitfortransmission/reception  
errorchecking. ItalsofeaturesaRetransmit(RT)capabilitythatallowsforreset  
of the read pointer to its initial position when RT is pulsed LOW to allow for  
retransmissionfromthebeginningofdata. AHalf-FullFlagisavailableinthe  
singledevicemodeandwidthexpansionmodes.  
Active: 440mW (max.)  
Power-down: 28mW (max.)  
Ultra high speed12ns access time  
Asynchronous and simultaneous read and write  
Fully expandable by both word depth and/or bit width  
Pin and functionally compatible with 720X family  
Status Flags: Empty, Half-Full, Full  
Auto-retransmit capability  
High-performance CEMOS™ technology  
Military product compliant to MIL-STD-883, Class B  
Standard Military Drawing #5962-87531, 5962-89666, 5962-89863  
and 5962-89536 are listed on this function  
TheseFIFOs arefabricatedusingIDT’s high-speedCMOStechnology.  
They are designed for those applications requiring asynchronous and  
Dual versions available in the TSSOP package. For more informa- simultaneous read/writes in multiprocessing and rate buffer applications.  
tion, see IDT7280/7281/7282 data sheet  
IDT7280 = 2 x IDT7200  
Militarygradeproductismanufacturedincompliancewiththelatestrevisionof  
MIL-STD-883, Class B.  
IDT7281 = 2 x IDT7201  
IDT7282 = 2 x IDT7202  
Industrial temperature range (–40oC to +85oC) is available  
(plastic packages only)  
FUNCTIONAL BLOCK DIAGRAM  
DATA INPUTS  
(D0-D8)  
WRITE  
CONTROL  
W
RAM  
ARRAY  
256 x 9  
WRITE  
POINTER  
READ  
POINTER  
512 x 9  
1,024 x 9  
THREE-  
STATE  
BUFFERS  
RS  
DATA OUTPUTS  
READ  
(Q0-Q8)  
RESET  
LOGIC  
R
CONTROL  
FLAG  
LOGIC  
EF  
FF  
FL/RT  
EXPANSION  
LOGIC  
2679 drw 01  
XO/HF  
XI  
IDTandtheIDTlogoaretrademarksofIntegratedDeviceTechnology,Inc.  
SEPTEMBER 2002  
COMMERCIAL, INDUSTRIAL AND MILITARY TEMPERATURE RANGES  
1
2002 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.  
DSC-2679/10  

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