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IDT7207L20PB PDF预览

IDT7207L20PB

更新时间: 2024-11-10 23:01:11
品牌 Logo 应用领域
艾迪悌 - IDT 先进先出芯片
页数 文件大小 规格书
12页 152K
描述
CMOS ASYNCHRONOUS FIFO 32,768 x 9

IDT7207L20PB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP28,.6针数:28
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.13
最长访问时间:20 ns其他特性:RETRANSMIT
最大时钟频率 (fCLK):33.3 MHz周期时间:30 ns
JESD-30 代码:R-PDIP-T28JESD-609代码:e0
长度:36.576 mm内存密度:294912 bit
内存集成电路类型:OTHER FIFO内存宽度:9
湿度敏感等级:1功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX9可输出:NO
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883 Class B
座面最大高度:4.699 mm最大待机电流:0.025 A
子类别:FIFOs最大压摆率:0.15 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn85Pb15)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:20宽度:15.24 mm
Base Number Matches:1

IDT7207L20PB 数据手册

 浏览型号IDT7207L20PB的Datasheet PDF文件第2页浏览型号IDT7207L20PB的Datasheet PDF文件第3页浏览型号IDT7207L20PB的Datasheet PDF文件第4页浏览型号IDT7207L20PB的Datasheet PDF文件第5页浏览型号IDT7207L20PB的Datasheet PDF文件第6页浏览型号IDT7207L20PB的Datasheet PDF文件第7页 
CMOS ASYNCHRONOUS FIFO  
32,768 x 9  
IDT7207  
Integrated Device Technology, Inc.  
DESCRIPTION:  
FEATURES:  
The IDT7207 is a monolithic dual-port memory buffer with  
internal pointers that load and empty data on a first-in/first-out  
basis. The device uses Full and Empty flags to prevent data  
overflow and underflow and expansion logic to allow for  
unlimited expansion capability in both word size and depth.  
Data is toggled in and out of the device through the use of  
the Write (W) and Read (R) pins.  
The devices 9-bit width provides a bit for a control or parity  
at the user’s option. It also features a Retransmit (RT) capa-  
bilitythatallowsthereadpointertoberesettoitsinitialposition  
when RT is pulsed LOW. A Half-Full Flag is available in the  
single device and width expansion modes.  
• 32768 x 9 storage capacity  
• High-speed: 15ns access time  
• Low power consumption  
— Active: 660mW (max.)  
— Power-down: 44mW (max.)  
• Asynchronous and simultaneous read and write  
• Fully expandable in both word depth and width  
• Pin and functionally compatible with IDT720x family  
• Status Flags: Empty, Half-Full, Full  
• Retransmit capability  
• High-performance CMOS technology  
• Military product compliant to MIL-STD-883, Class B  
• Industrial temperature range (-40oC to +85oC) is avail-  
able, tested to military electrical specifications  
The IDT7207 is fabricated using IDT’s high-speed CMOS  
technology. It is designed for applications requiring asynchro-  
nous and simultaneous read/writes in multiprocessing, rate  
buffering, and other applications.  
Military grade product is manufactured in compliance with  
the latest revision of MIL-STD-883, Class B.  
FUNCTIONAL BLOCK DIAGRAM  
DATA INPUTS  
(D0 –D 8  
)
WRITE  
CONTROL  
W
RAM ARRAY  
32,768 x 9  
WRITE  
POINTER  
READ  
POINTER  
THREE-  
STATE  
BUFFERS  
RS  
DATA OUTPUTS  
(Q 0  
Q8  
)
READ  
CONTROL  
RESET  
LOGIC  
R
FLAG  
LOGIC  
EF  
FF  
FL/RT  
EXPANSION  
LOGIC  
XO/HF  
XI  
3140 drw 01  
The IDT logo is a registered trademark of Integrated Device Techology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
DECEMBER 1996  
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.  
1996 Integrated Device Technology, Inc.  
DSC-3140/2  
5.05  
1

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