Datasheet > IDT71V65602S100B

IDT71V65602S100B

更新时间： 2024-09-19 04:05:19

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器内存集成电路
页数	文件大小	规格书
26页	970K
描述
ZBT SRAM, 256KX36, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119

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IDT71V65602S100B 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	BGA,	针数：	119
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
最长访问时间：	5 ns	其他特性：	PIPELINED ARCHITECTURE
JESD-30 代码：	R-PBGA-B119	JESD-609代码：	e0
长度：	22 mm	内存密度：	9437184 bit
内存集成电路类型：	ZBT SRAM	内存宽度：	36
功能数量：	1	端子数量：	119
字数：	262144 words	字数代码：	256000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	256KX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	认证状态：	Not Qualified
座面最大高度：	2.36 mm	最大供电电压 (Vsup)：	3.465 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	BALL	端子节距：	1.27 mm
端子位置：	BOTTOM	宽度：	14 mm
Base Number Matches：	1

IDT71V65602S100B 数据手册

256K x 36, 512K x 18

IDT71V65602

IDT71V65802

3.3VSynchronousZBT™SRAMs

2.5V I/O, Burst Counter

PipelinedOutputs

Features

AddressandcontrolsignalsareappliedtotheSRAMduringoneclock

cycle,andtwocycleslatertheassociateddatacycleoccurs,beitreadorwrite.

The IDT71V65602/5802 contain data I/O, address and control signal

registers.Outputenableistheonlyasynchronoussignalandcanbeusedto

disabletheoutputsatanygiventime.

A Clock Enable (CEN) pin allows operation of the IDT71V65602/5802

tobesuspendedaslongasnecessary.Allsynchronousinputsareignored

when(CEN)ishighandtheinternaldeviceregisterswillholdtheirprevious

values.

There are three chip enable pins (CE¹, CE2, CE2) that allow the

usertodeselectthedevicewhendesired. Ifanyoneofthesethreearenot

assertedwhenADV/LDislow, nonewmemoryoperationcanbeinitiated.

However,anypendingdatatransfers(readsorwrites)willbecompleted.The

databuswilltri-statetwocyclesafterchipisdeselectedorawriteisinitiated.

The IDT71V65602/5802 have an on-chip burst counter. In the burst

mode, the IDT71V65602/5802 can provide four cycles of data for a single

addresspresentedtotheSRAM.Theorderoftheburstsequenceisdefined

bytheLBOinputpin.TheLBOpinselectsbetweenlinearandinterleavedburst

sequence.TheADV/LDsignalisusedtoloadanewexternaladdress(ADV/

LD=LOW) orincrementtheinternalburstcounter(ADV/LD=HIGH).

The IDT71V65602/5802 SRAM utilize IDT's latest high-performance

◆

256K x 36, 512K x 18 memory configurations

◆

Supports high performance system speed - 150MHz

(3.8ns Clock-to-Data Access)

ZBT Feature - No dead cycles between write and read cycles

Internally synchronized output buffer enable eliminates the

◆

need to control OE

Single R/W (READ/WRITE) control pin

◆

Positive clock-edge triggered address, data, and control

signal registers for fully pipelined applications

4-word burst capability (interleaved or linear)

Individual byte write (BW¹- BW⁴) control (May tie active)

Three chip enables for simple depth expansion

3.3V power supply (±5%)

2.5V I/O Supply (VDDQ)

Power down controlled by ZZ input

Packaged in a JEDEC standard 100-pin plastic thin quad and

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch

ball grid array (fBGA)

◆

Description

The IDT71V65602/5802 are 3.3V high-speed 9,437,184-bit CMOSprocess,andarepackagedinaJEDECStandard14mmx20mm100-

(9Megabit)synchronousSRAMs.Theyaredesignedtoeliminatedead pinthinplasticquadflatpack(TQFP)aswellasa119ballgridarray(BGA)

bus cycles when turning the bus around between reads and writes, or and a 165 fine pitch ball grid array (fBGA).

writes andreads.Thus,theyhavebeengiventhenameZBT ,orZero

Bus Turnaround.

PinDescriptionSummary

A0-A18

Address Inputs

Input

I/O

Synchronous

Asynchronous

Synchronous

N/A

Chip Enables

CE1, CE2, CE2

Output Enable

R/W

Read/Write Signal

Clock Enable

CEN

Individual Byte Write Selects

Clock

BW1, BW2, BW3, BW4

CLK

ADV/LD

Advance burstaddress / Load new address

Linear / Interleaved Burst Order

Sleep Mode

Synchronous

Static

LBO

Asynchronous

Synchronous

Static

I/O0-I/O31, I/OP1-I/OP4

VDD, VDDQ

Data Input / Output

Core Power, I/O Power

Ground

Supply

VSS

Static

5303 tbl 01

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.

OCTOBER 2004

DSC-5303/05

12 3 4 5 6 7...26

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与IDT71V65602S100B相关器件

型号	品牌	获取价格	描述	数据表
IDT71V65602S100BG	IDT	获取价格	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S-100BG	IDT	获取价格	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S100BGI	IDT	获取价格	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S-100BGI	IDT	获取价格	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S100BQ	IDT	获取价格	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S-100BQ	IDT	获取价格	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S100BQG	IDT	获取价格	ZBT SRAM, 256KX36, 5ns, CMOS, PBGA165, 13 X 15 MM, FPBGA-165
IDT71V65602S100BQGI	IDT	获取价格	ZBT SRAM, 256KX36, 5ns, CMOS, PBGA165, 13 X 15 MM, FPBGA-165
IDT71V65602S100BQI	IDT	获取价格	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S-100BQI	IDT	获取价格	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

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