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IDT71V416S10BEG PDF预览

IDT71V416S10BEG

更新时间: 2024-11-10 22:10:35
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器
页数 文件大小 规格书
9页 91K
描述
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

IDT71V416S10BEG 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:BGA
包装说明:BGA, BGA48,6X8,30针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.19
Is Samacsys:N最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:S-PBGA-B48
JESD-609代码:e1长度:9 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA48,6X8,30
封装形状:SQUARE封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.02 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.2 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:9 mmBase Number Matches:1

IDT71V416S10BEG 数据手册

 浏览型号IDT71V416S10BEG的Datasheet PDF文件第2页浏览型号IDT71V416S10BEG的Datasheet PDF文件第3页浏览型号IDT71V416S10BEG的Datasheet PDF文件第4页浏览型号IDT71V416S10BEG的Datasheet PDF文件第5页浏览型号IDT71V416S10BEG的Datasheet PDF文件第6页浏览型号IDT71V416S10BEG的Datasheet PDF文件第7页 
3.3V CMOS Static RAM  
4 Meg (256K x 16-Bit)  
IDT71V416S  
IDT71V416L  
Description  
Features  
TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganized  
as256Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliability  
CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-  
vativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-  
speedmemoryneeds.  
256K x 16 advanced high-speed CMOS Static RAM  
JEDEC Center Power / GND pinout for reduced noise.  
Equal access and cycle times  
– CommercialandIndustrial:10/12/15ns  
One Chip Select plus one Output Enable pin  
Bidirectional data inputs and outputs directly  
TheIDT71V416has anoutputenablepinwhichoperates as fastas  
5ns,withaddressaccesstimesasfastas10ns.Allbidirectionalinputsand  
outputsoftheIDT71V416areLVTTL-compatibleandoperationisfroma  
single3.3Vsupply.Fullystaticasynchronouscircuitryisused,requiring  
noclocks orrefreshforoperation.  
The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a  
44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x  
9mmpackage.  
LVTTL-compatible  
Low power consumption via chip deselect  
Upper and Lower Byte Enable Pins  
Single 3.3V power supply  
Available in 44-pin, 400 mil plastic SOJ package and a 44-  
pin, 400 mil TSOP Type II package and a 48 ball grid array,  
9mm x 9mm package.  
FunctionalBlockDiagram  
Output  
Enable  
Buffer  
OE  
Address  
Buffers  
Row / Column  
Decoders  
A0 - A17  
High  
8
8
8
8
Byte  
I/O 15  
I/O 8  
Output  
Chip  
Select  
Buffer  
Buffer  
CS  
High  
Byte  
Write  
Sense  
Amps  
and  
Write  
Drivers  
4,194,304-bit  
Memory  
Array  
Buffer  
16  
Write  
Enable  
Buffer  
Low  
Byte  
8
8
8
8
WE  
I/O 7  
I/O 0  
Output  
Buffer  
Low  
Byte  
Write  
Buffer  
BHE  
BLE  
Byte  
Enable  
Buffers  
3624 drw 01  
JANUARY 2004  
1
©2004IntegratedDeviceTechnology,Inc.  
DSC-3624/09  

IDT71V416S10BEG 替代型号

型号 品牌 替代类型 描述 数据表
71V416S10BEG8 IDT

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71V416S10BEG IDT

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3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416S10BEI IDT

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Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, BGA-48
IDT71V416S10BEI8 IDT

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IDT71V416S10PH IDT

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IDT71V416S10PHG IDT

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3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416S10PHGI IDT

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3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416S10PHI IDT

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Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
IDT71V416S10Y IDT

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Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
IDT71V416S10Y8 IDT

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Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
IDT71V416S10YG IDT

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3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)