5秒后页面跳转
IDT71V321S35TFG PDF预览

IDT71V321S35TFG

更新时间: 2024-11-04 13:08:39
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器
页数 文件大小 规格书
14页 130K
描述
Dual-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, GREEN, STQFP-64

IDT71V321S35TFG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:10 X 10 MM, 1.40 MM HEIGHT, GREEN, STQFP-64针数:64
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.45
最长访问时间:35 nsI/O 类型:COMMON
JESD-30 代码:S-PQFP-G64JESD-609代码:e3
长度:10 mm内存密度:16384 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端口数量:2端子数量:64
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP64,.47SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.005 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.125 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:10 mmBase Number Matches:1

IDT71V321S35TFG 数据手册

 浏览型号IDT71V321S35TFG的Datasheet PDF文件第2页浏览型号IDT71V321S35TFG的Datasheet PDF文件第3页浏览型号IDT71V321S35TFG的Datasheet PDF文件第4页浏览型号IDT71V321S35TFG的Datasheet PDF文件第5页浏览型号IDT71V321S35TFG的Datasheet PDF文件第6页浏览型号IDT71V321S35TFG的Datasheet PDF文件第7页 
IDT71V321S/L  
IDT71V421S/L  
HIGH SPEED 3.3V  
2K X 8 DUAL-PORT  
STATIC RAM WITH INTERRUPTS  
ꢀeatures  
MASTER IDT71V321 easily expands data bus width to 16-  
or-more-bits using SLAVE IDT71V421  
High-speed access  
– Commercial: 25/35/55ns (max.)  
Industrial: 25ns (max.)  
Low-power operation  
On-chip port arbitration logic (IDT71V321 only)  
BUSY output flag on IDT71V321; BUSY input on IDT71V421  
Fully asynchronous operation from either port  
Battery backup operation2V data retention (L only)  
TTL-compatible, single 3.3V power supply  
Available in 52-pin PLCC, 64-pin TQFP and STQFP  
packages  
IDT71V321/IDT71V421S  
Active: 325mW (typ.)  
Standby: 5mW (typ.)  
IDT71V321/V421L  
Active: 325mW (typ.)  
Standby: 1mW (typ.)  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Two INT flags for port-to-port communications  
ꢀunctionalBlockDiagram  
OER  
OEL  
CER  
CEL  
R/WR  
R/WL  
I/O0L- I/O7L  
I/O0R-I/O7R  
I/O  
Control  
I/O  
Control  
(1,2)  
(1,2)  
BUSYR  
BUSYL  
A10L  
A0L  
A10R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A0R  
11  
11  
ARBITRATION  
and  
INTERRUPT  
LOGIC  
CEL  
OEL  
CER  
OER  
R/WR  
R/WL  
(2)  
(2)  
INTL  
INTR  
3026 drw 01  
NOTES:  
1. IDT71V321 (MASTER): BUSY is an output. IDT71V421 (SLAVE): BUSY is input.  
2. BUSY and INT are totem-pole outputs.  
AUGUST 2001  
1
DSC-3026/8  
©2001IntegratedDeviceTechnology,Inc.  

与IDT71V321S35TFG相关器件

型号 品牌 获取价格 描述 数据表
IDT71V321S35TFG8 IDT

获取价格

Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64
IDT71V321S35TFGI IDT

获取价格

Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64
IDT71V321S35TFI IDT

获取价格

HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT
IDT71V321S45J IDT

获取价格

Multi-Port SRAM, 2KX8, 45ns, CMOS, PQCC52, PLASTIC, LCC-52
IDT71V321S45J8 IDT

获取价格

Multi-Port SRAM, 2KX8, 45ns, CMOS, PQCC52, PLASTIC, LCC-52
IDT71V321S45PF IDT

获取价格

Multi-Port SRAM, 2KX8, 45ns, CMOS, PQFP64, PLASTIC, TQFP-64
IDT71V321S45PF8 IDT

获取价格

Multi-Port SRAM, 2KX8, 45ns, CMOS, PQFP64, PLASTIC, TQFP-64
IDT71V321S55J IDT

获取价格

HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT
IDT71V321S55JG IDT

获取价格

Dual-Port SRAM, 2KX8, 55ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, GREEN, PL
IDT71V321S55JGI IDT

获取价格

Multi-Port SRAM, 2KX8, 55ns, CMOS, PQCC52