是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | LCC |
包装说明: | QCCN, | 针数: | 48 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.64 |
Is Samacsys: | N | 最长访问时间: | 100 ns |
其他特性: | INTERRUPT FLAG | JESD-30 代码: | S-CQCC-N48 |
JESD-609代码: | e0 | 长度: | 14.3002 mm |
内存密度: | 8192 bit | 内存集成电路类型: | MULTI-PORT SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 48 |
字数: | 1024 words | 字数代码: | 1000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 1KX8 |
输出特性: | 3-STATE | 可输出: | YES |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | QCCN |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
认证状态: | Not Qualified | 座面最大高度: | 3.048 mm |
最小待机电流: | 2 V | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子节距: | 1.016 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 14.3002 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT7140LA100P | IDT |
获取价格 |
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM | |
IDT7140LA100PB | IDT |
获取价格 |
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM | |
IDT7140LA100PDGB | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 100ns, CMOS, PDIP48, 0.550 X 0.610 INCH, 0.190 INCH HEIGHT, GREEN, P | |
IDT7140LA100PDGI | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 100ns, CMOS, PDIP48, 0.550 X 0.610 INCH, 0.190 INCH HEIGHT, GREEN, P | |
IDT7140LA100PDGI8 | IDT |
获取价格 |
Multi-Port SRAM, 1KX8, 100ns, CMOS, PDIP48 | |
IDT7140LA100PF | IDT |
获取价格 |
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM | |
IDT7140LA100PF8 | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 100ns, CMOS, PQFP64, TQFP-64 | |
IDT7140LA100PFB | IDT |
获取价格 |
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM | |
IDT7140LA100PFB8 | IDT |
获取价格 |
Multi-Port SRAM, 1KX8, 100ns, CMOS, PQFP64 | |
IDT7140LA100PFG | IDT |
获取价格 |
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |