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IDT71342LA20PFG PDF预览

IDT71342LA20PFG

更新时间: 2024-11-26 13:08:39
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
13页 147K
描述
Dual-Port SRAM, 4KX8, 20ns, CMOS, PQFP64, PLASTIC, TQFP-64

IDT71342LA20PFG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LQFP,针数:64
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.48
最长访问时间:20 ns其他特性:SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP
JESD-30 代码:S-PQFP-G64JESD-609代码:e3
长度:14 mm内存密度:32768 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端口数量:2端子数量:64
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.6 mm
最小待机电流:2 V最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.8 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

IDT71342LA20PFG 数据手册

 浏览型号IDT71342LA20PFG的Datasheet PDF文件第2页浏览型号IDT71342LA20PFG的Datasheet PDF文件第3页浏览型号IDT71342LA20PFG的Datasheet PDF文件第4页浏览型号IDT71342LA20PFG的Datasheet PDF文件第5页浏览型号IDT71342LA20PFG的Datasheet PDF文件第6页浏览型号IDT71342LA20PFG的Datasheet PDF文件第7页 
IDT71342SA/LA  
HIGH-SPEED  
4K x 8 DUAL-PORT  
STATIC RAM WITH SEMAPHORE  
Integrated Device Technology, Inc.  
FEATURES:  
DESCRIPTION:  
• High-speed access  
TheIDT71342isanextremelyhigh-speed4Kx8Dual-Port  
Static RAM with full on-chip hardware support of semaphore  
signalling between the two ports.  
— Commercial: 20/25/35/45/55/70ns (max.)  
• Low-power operation  
— IDT71342SA  
TheIDT71342providestwoindependentportswithseparate  
control, address, and I/O pins that permit independent,  
asynchronous access for reads or writes to any location in  
memory. To assist in arbitrating between ports, a fully  
independent semaphore logic block is provided. This block  
contains unassigned flags which can be accessed by either  
side; however, only one side can control the flag at any time.  
Active: 500mW (typ.)  
Standby: 5mW (typ.)  
— IDT71342LA  
Active: 500mW (typ.)  
Standby: 1mW (typ.)  
• Fully asynchronous operation from either port  
• Full on-chip hardware support of semaphore signalling An automatic power down feature, controlled by CEand SEM,  
between ports  
permits the on-chip circuitry of each port to enter a very low  
standby power mode (both CE and SEM High).  
• Battery backup operation—2V data retention  
• TTL-compatible; single 5V (±10%) power supply  
• Available in plastic packages  
• Industrial temperature range (–40°C to +85°C) is avail-  
able, tested to military electrical specifications  
Fabricated using IDT’s CMOS high-performance  
technology, this device typically operates on only 500mW of  
power. Low-power (LA) versions offer battery backup data  
retentioncapability,witheachporttypicallyconsuming200µW  
from a 2V battery. The device is packaged in either a 64-pin  
TQFP, thin quad plastic flatpack, or a 52-pin PLCC.  
FUNCTIONAL BLOCK DIAGRAM  
R/  
WL  
R/  
WR  
CER  
CEL  
OER  
OEL  
COLUMN  
I/O  
COLUMN  
I/O  
I/O0R - I/O7R  
I/O0L- I/O7L  
MEMORY  
ARRAY  
SEMAPHORE  
LOGIC  
SEM  
R
SEM  
L
LEFT SIDE  
ADDRESS  
DECODE  
LOGIC  
RIGHT SIDE  
ADDRESS  
DECODE  
LOGIC  
A
0R- A11R  
A0L- A11L  
2721 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
COMMERCIAL TEMPERATURE RANGE  
OCTOBER 1996  
©1996 Integrated Device Technology, Inc.  
DSC-2721/4  
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.  
1
6.05  

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