是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | 0.600 INCH, PLASTIC, DIP-48 |
针数: | 48 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.41 |
风险等级: | 5.68 | 最长访问时间: | 45 ns |
其他特性: | AUTOMATIC POWER-DOWN | I/O 类型: | COMMON |
JESD-30 代码: | R-PDIP-T48 | JESD-609代码: | e0 |
长度: | 61.849 mm | 内存密度: | 16384 bit |
内存集成电路类型: | MULTI-PORT SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 48 | 字数: | 2048 words |
字数代码: | 2000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 2KX8 | 输出特性: | 3-STATE |
可输出: | YES | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP48,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
最大待机电流: | 0.0015 A | 最小待机电流: | 2 V |
子类别: | SRAMs | 最大压摆率: | 0.145 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn85Pb15) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT7132LA55C | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM | |
IDT7132LA55CB | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM | |
IDT7132LA55CG | IDT |
获取价格 |
暂无描述 | |
IDT7132LA55CI | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | |
IDT7132LA55F | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM | |
IDT7132LA55FB | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM | |
IDT7132LA55FBG | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 55ns, CMOS, CQFP48, 0.750 X 0.750 INCH, 0.110 INCH HEIGHT, CERAMIC, | |
IDT7132LA55FG | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 55ns, CMOS, CQFP48, 0.750 X 0.750 INCH, 0.110 INCH HEIGHT, GREEN, CE | |
IDT7132LA55FGB | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 55ns, CMOS, CQFP48, 0.750 X 0.750 INCH, 0.110 INCH HEIGHT, GREEN, CE | |
IDT7132LA55FI | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |