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IDT71256L25YG8 PDF预览

IDT71256L25YG8

更新时间: 2024-09-29 15:44:03
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 98K
描述
Standard SRAM, 32KX8, 25ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, SOJ-28

IDT71256L25YG8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOJ
包装说明:SOJ,针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.11
最长访问时间:25 nsJESD-30 代码:R-PDSO-J28
JESD-609代码:e3长度:17.9324 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:3.556 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.5184 mmBase Number Matches:1

IDT71256L25YG8 数据手册

 浏览型号IDT71256L25YG8的Datasheet PDF文件第2页浏览型号IDT71256L25YG8的Datasheet PDF文件第3页浏览型号IDT71256L25YG8的Datasheet PDF文件第4页浏览型号IDT71256L25YG8的Datasheet PDF文件第5页浏览型号IDT71256L25YG8的Datasheet PDF文件第6页浏览型号IDT71256L25YG8的Datasheet PDF文件第7页 
IDT71256S  
IDT71256L  
CMOS Static RAM  
256K (32K x 8-Bit)  
Address access times as fast as 20ns are available with power  
consumptionofonly350mW(typ.).Thecircuitalsooffersareducedpower  
standbymode.WhenCSgoesHIGH,thecircuitwillautomaticallygotoand  
remainin,alow-powerstandbymodeaslongasCSremainsHIGH. This  
capabilityprovidessignificantsystemlevelpowerandcoolingsavings.  
The low-power (L) version also offers a battery backup data retention  
capabilitywherethecircuittypicallyconsumesonly5µWwhenoperating  
offa2Vbattery.  
TheIDT71256ispackagedina28-pin(300or600mil)ceramicDIP,  
a 28-pin 300 mil SOJ providing high board level packing densities.  
TheIDT71256militaryRAMismanufacturedincompliancewiththe  
latestrevisionofMIL-STD-883,ClassB,makingitideallysuitedtomilitary  
temperatureapplicationsdemandingthehighestlevelofperformanceand  
reliability.  
Features  
High-speed address/chip select time  
Military:25/35/45/55/70/85/100ns(max.)  
– Commercial/Industrial:20/25/35ns(max.)lowpoweronly  
Low-power operation  
Battery Backup operation – 2V data retention  
Produced with advanced high-performance CMOS  
technology  
Input and output directly TTL-compatible  
Available in standard 28-pin (300 or 600 mil) ceramic DIP,  
28-pin (300 mil) SOJ  
Military product compliant to MIL-STD-883, Class B  
Description  
TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas  
32K x 8. It is fabricated using high-performance, high-reliability CMOS  
technology.  
FunctionalBlockDiagram  
A0  
VCC  
GND  
262,144 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A14  
I/O  
0
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
OE  
CONTROL  
CIRCUIT  
2946 drw 01  
WE  
SEPTEMBER 2013  
1
©2013IntegratedDeviceTechnology,Inc.  
DSC-2946/13  

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