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IDT71124S12Y PDF预览

IDT71124S12Y

更新时间: 2024-11-17 22:34:27
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 85K
描述
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

IDT71124S12Y 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:0.400 INCH, PLASTIC, SOJ-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.32Is Samacsys:N
最长访问时间:12 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J32JESD-609代码:e0
长度:20.955 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端口数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified座面最大高度:3.683 mm
最大待机电流:0.01 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.16 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:10.16 mm
Base Number Matches:1

IDT71124S12Y 数据手册

 浏览型号IDT71124S12Y的Datasheet PDF文件第2页浏览型号IDT71124S12Y的Datasheet PDF文件第3页浏览型号IDT71124S12Y的Datasheet PDF文件第4页浏览型号IDT71124S12Y的Datasheet PDF文件第5页浏览型号IDT71124S12Y的Datasheet PDF文件第6页浏览型号IDT71124S12Y的Datasheet PDF文件第7页 
IDT71124  
CMOS Static RAM  
1 Meg (128K x 8-Bit)  
Revolutionary Pinout  
Description  
Features  
The IDT71124 is a 1,048,576-bit high-speed static RAM orga-  
nized as 128K x 8. It is fabricated using IDTs high-performance,  
high-reliability CMOS technology. This state-of-the-art technology,  
combined with innovative circuit design techniques, provides a cost-  
effective solution for high-speed memory needs. The JEDEC  
centerpower/GND pinout reduces noise generation and improves  
system performance.  
128K x 8 advanced high-speed CMOS static RAM  
JEDEC revolutionary pinout (center power/GND) for  
reduced noise.  
Equal access and cycle times  
– Commercial and Industrial: 12/15/20ns  
One Chip Select plus one Output Enable pin  
Bidirectional inputs and outputs directly TTL-compatible  
Low power consumption via chip deselect  
The IDT71124 has an output enable pin which operates as fast  
as 6ns, with address access times as fast as 12ns available. All  
bidirectional inputs and outputs of the IDT71124 are TTL-compatible  
and operation is from a single 5V supply. Fully static asynchronous  
circuitry is used; no clocks or refreshes are required for operation.  
The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ.  
Available in a 32-pin 400 mil Plastic SOJ.  
Functional Block Diagram  
A
0
1,048,576-BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A
16  
8
8
0 7  
I/O - I/O  
I/O CONTROL  
,
8
WE  
OE  
CS  
CONTROL  
LOGIC  
3514 drw 01  
FEBRUARY 2001  
1
©2000IntegratedDeviceTechnology,Inc.  
DSC-3514/10  

IDT71124S12Y 替代型号

型号 品牌 替代类型 描述 数据表
IDT71124S12YG IDT

功能相似

Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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IDT71124S12YG IDT

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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
IDT71124S12YG8 IDT

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IDT71124S12YGI8 IDT

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CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
IDT71124S12YI IDT

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IDT71124S12YI8 IDT

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x8 SRAM
IDT71124S15Y IDT

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CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
IDT71124S15YG IDT

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Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
IDT71124S15YG8 IDT

获取价格

Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32