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IDT70V914S25PFI8 PDF预览

IDT70V914S25PFI8

更新时间: 2024-11-07 19:35:11
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
10页 96K
描述
Dual-Port SRAM, 4KX9, 25ns, CMOS, PQFP80, 14 X 14MM, 1.40 MM HEIGHT, TQFP-80

IDT70V914S25PFI8 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:14 X 14MM, 1.40 MM HEIGHT, TQFP-80
针数:80Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.92最长访问时间:25 ns
I/O 类型:COMMONJESD-30 代码:S-PQFP-G80
JESD-609代码:e0长度:14 mm
内存密度:36864 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:9湿度敏感等级:3
功能数量:1端口数量:2
端子数量:80字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX9输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP80,.64SQ封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.015 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.19 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:14 mm
Base Number Matches:1

IDT70V914S25PFI8 数据手册

 浏览型号IDT70V914S25PFI8的Datasheet PDF文件第2页浏览型号IDT70V914S25PFI8的Datasheet PDF文件第3页浏览型号IDT70V914S25PFI8的Datasheet PDF文件第4页浏览型号IDT70V914S25PFI8的Datasheet PDF文件第5页浏览型号IDT70V914S25PFI8的Datasheet PDF文件第6页浏览型号IDT70V914S25PFI8的Datasheet PDF文件第7页 
IDT70V914S  
HIGH SPEED 3.3V  
(4K X 9) SYNCHRONOUS  
DUAL-PORT RAM  
Features  
High-speed clock-to-data output times  
Data input, address, and control registers  
– Commercial:20/25ns (max.)  
Industrial:20/25ns (max.)  
Low-power operation  
– Fast 20ns clock to data out  
– Self-timedwriteallowsfastcycletimes  
– 20ns cycletimes,50MHzoperation  
LVTTL-compatible, single 3.3V (+ 0.3V) power supply  
Clock Enable feature  
Guaranteed data output hold times  
Available in an 80-pin TQFP  
IDT70V914S  
Active: 250 mW (typ.)  
Standby: 10 mW (typ.)  
Architecture based on Dual-Port RAM cells  
Allowsfullsimultaneousaccessfrombothports  
Synchronous operation  
Industrial temperature range (-40°C to +85°C) is available  
– 5ns setup to clock, 1ns hold on all control, data, and address  
inputs  
FunctionalBlockDiagram  
0-8R  
I/O  
I/O0-8L  
WRITE  
LOGIC  
WRITE  
LOGIC  
MEMORY  
ARRAY  
SENSE  
AMPS  
SENSE  
AMPS  
DECODER DECODER  
REG  
en  
REG  
en  
R
OE  
OE  
L
L
R
CLK  
CLK  
L
CLKEN  
R
CLKEN  
Self-  
Self-  
timed  
Write  
Logic  
timed  
Write  
Logic  
R/W  
L
REG  
R
R/W  
REG  
CE  
L
CE  
R
A0R - A11R  
A
0L - A11L  
5616 drw 01  
JANUARY 2001  
1
DSC-5616/2  
©2000IntegratedDeviceTechnology,Inc.  

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