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IDT70V914S20PFGI PDF预览

IDT70V914S20PFGI

更新时间: 2024-10-30 04:38:47
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
10页 108K
描述
Dual-Port SRAM, 4KX9, 20ns, CMOS, PQFP80, 14 X 14MM, 1.40 MM HEIGHT, TQFP-80

IDT70V914S20PFGI 数据手册

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IDT70V914S  
HIGH SPEED 3.3V  
(4K X 9) SYNCHRONOUS  
DUAL-PORT RAM  
Features  
High-speed clock-to-data output times  
Data input, address, and control registers  
– Commercial:20/25ns (max.)  
Industrial:20/25ns (max.)  
Low-power operation  
– Fast 20ns clock to data out  
– Self-timedwriteallowsfastcycletimes  
– 20ns cycletimes,50MHzoperation  
LVTTL-compatible, single 3.3V (+ 0.3V) power supply  
Clock Enable feature  
Guaranteed data output hold times  
Available in an 80-pin TQFP  
IDT70V914S  
Active: 250 mW (typ.)  
Standby: 10 mW (typ.)  
Architecture based on Dual-Port RAM cells  
Allowsfullsimultaneousaccessfrombothports  
Synchronous operation  
Industrial temperature range (-40°C to +85°C) is available  
– 5ns setup to clock, 1ns hold on all control, data, and address  
inputs  
FunctionalBlockDiagram  
I/O0-8R  
I/O0-8L  
WRITE  
WRITE  
LOGIC  
MEMORY  
LOGIC  
ARRAY  
SENSE  
AMPS  
SENSE  
AMPS  
DECODER DECODER  
REG  
en  
REG  
en  
OE  
CLK  
CLKEN  
R
OE  
CLK  
CLKEN  
L
L
R
L
R
Self-  
Self-  
timed  
Write  
Logic  
timed  
Write  
Logic  
R/W  
L
REG  
R/WR  
REG  
CEL  
CE  
R
A0R - A11R  
A0L - A11L  
5616 drw 01  
JANUARY 2001  
1
DSC-5616/2  
©2000IntegratedDeviceTechnology,Inc.  

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