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IDT70V28L20PFGI PDF预览

IDT70V28L20PFGI

更新时间: 2024-09-15 12:59:15
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
17页 153K
描述
Dual-Port SRAM, 64KX16, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-100

IDT70V28L20PFGI 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:QFP
包装说明:LFQFP, QFP100,.63SQ,20针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.28
Is Samacsys:N最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:S-PQFP-G100
JESD-609代码:e3长度:14 mm
内存密度:1048576 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端口数量:2
端子数量:100字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP100,.63SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.003 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.22 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

IDT70V28L20PFGI 数据手册

 浏览型号IDT70V28L20PFGI的Datasheet PDF文件第2页浏览型号IDT70V28L20PFGI的Datasheet PDF文件第3页浏览型号IDT70V28L20PFGI的Datasheet PDF文件第4页浏览型号IDT70V28L20PFGI的Datasheet PDF文件第5页浏览型号IDT70V28L20PFGI的Datasheet PDF文件第6页浏览型号IDT70V28L20PFGI的Datasheet PDF文件第7页 
IDT70V28L  
HIGH-SPEED 3.3V  
64K x 16 DUAL-PORT  
STATIC RAM  
ꢀeatures  
True Dual-Ported memory cells which allow simultaneous  
access of the same memory location  
High-speed access  
– Commercial:15/20ns (max.)  
Industrial:20ns (max.)  
M/S = VIH for BUSY output flag on Master,  
M/S = VIL for BUSY input on Slave  
Busy and Interrupt Flags  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Low-power operation  
IDT70V28L  
Fully asynchronous operation from either port  
Separate upper-byte and lower-byte controls for multi-  
plexed bus and bus matching compatibility  
LVTTL-compatible, single 3.3V (±0.3V) power supply  
Available in a 100-pin TQFP  
Active: 440mW (typ.)  
Standby: 660µW (typ.)  
Dual chip enables allow for depth expansion without  
external logic  
IDT70V28 easily expands data bus width to 32 bits or  
more using the Master/Slave select when cascading more  
than one device  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
ꢀunctional Block Diagram  
R/WL  
UBL  
R/WR  
UBR  
CE0L  
CE0R  
CE1L  
CE1R  
OER  
LBR  
OEL  
LBL  
I/O 8-15L  
I/O8-15R  
I/O  
Control  
I/O  
Control  
0-7L  
I/O  
I/O0-7R  
(1,2)  
(1,2)  
BUSYR  
BUSYL  
64Kx16  
MEMORY  
ARRAY  
70V28  
15L  
A15R  
A
Address  
Decoder  
Address  
Decoder  
A0L  
A0R  
16  
16  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE0R  
CE0L  
CE1L  
OEL  
CE1R  
OER  
R/WL  
R/WR  
SEML  
INTL  
SEMR  
(2)  
(2)  
INTR  
M/S(1)  
NOTES:  
4849 drw 01  
1. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=VIH).  
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).  
JANUARY 2002  
1
DSC-4849/3  
©2002IntegratedDeviceTechnology,Inc.  

IDT70V28L20PFGI 替代型号

型号 品牌 替代类型 描述 数据表
70V28L20PFGI IDT

完全替代

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

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