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IDT70V05S55PF8 PDF预览

IDT70V05S55PF8

更新时间: 2024-11-19 20:05:51
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
22页 168K
描述
Dual-Port SRAM, 8KX8, 55ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64

IDT70V05S55PF8 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:14 X 14 MM, 1.40 MM HEIGHT, TQFP-64针数:64
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.28
最长访问时间:55 ns其他特性:INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
I/O 类型:COMMONJESD-30 代码:S-PQFP-G64
JESD-609代码:e0长度:14 mm
内存密度:65536 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:2
端子数量:64字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP64,.66SQ,32封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.005 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.18 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子节距:0.8 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:14 mm
Base Number Matches:1

IDT70V05S55PF8 数据手册

 浏览型号IDT70V05S55PF8的Datasheet PDF文件第2页浏览型号IDT70V05S55PF8的Datasheet PDF文件第3页浏览型号IDT70V05S55PF8的Datasheet PDF文件第4页浏览型号IDT70V05S55PF8的Datasheet PDF文件第5页浏览型号IDT70V05S55PF8的Datasheet PDF文件第6页浏览型号IDT70V05S55PF8的Datasheet PDF文件第7页 
IDT70V05S/L  
HIGH-SPEED 3.3V  
8K x 8 DUAL-PORT  
STATIC RAM  
Features  
using the Master/Slave select when cascading more than  
one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
Interrupt Flag  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
TTL-compatible, single 3.3V (±0.3V) power supply  
Available in 68-pin PGA and PLCC, and a 64-pin TQFP  
Industrial temperature range (-40°C to +85°C) is available  
for selected speeds  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
Commercial: 15/20/25/35/55ns (max.)  
Industrial:20/25/35/55ns(max.)  
Low-power operation  
IDT70V05S  
Active:400mW(typ.)  
Standby: 3.3mW (typ.)  
IDT70V05L  
Active:380mW(typ.)  
Standby: 660µW (typ.)  
IDT70V05 easily expands data bus width to 16 bits or more  
Functional Block Diagram  
OER  
CER  
OEL  
CEL  
R/W  
R/W  
R
L
I/O0L- I/O7L  
I/O0R-I/O7R  
I/O  
Control  
I/O  
Control  
(1,2)  
(1,2)  
BUSYL  
BUSYR  
A12L  
A0L  
A12R  
A0R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
13  
13  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CEL  
OEL  
CER  
OER  
R/WR  
R/WL  
SEM  
INTL  
L
SEM  
INTR  
R
M/S  
(2)  
(2)  
2941 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs and INT outputs are non-tri-stated push-pull.  
MARCH 2000  
1
DSC 2941/6  
©2000IntegratedDeviceTechnology,Inc.  

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