Datasheet > 存储 > SRAM> IDT70T633S8BFI

IDT70T633S8BFI

更新时间： 2024-10-28 22:57:19

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
27页	340K
描述
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IDT70T633S8BFI 数据手册

HIGH-SPEED 2.5V

512/256K x 18

PRELIMINARY

IDT70T633/1S

ASYNCHRONOUS DUAL-PORT

STATIC RAM

WITH 3.3V 0R 2.5V INTERFACE

◆

Features

Full hardware support of semaphore signaling between

ports on-chip

On-chip port arbitration logic

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Sleep Mode Inputs on both ports

Supports JTAG features compliant to IEEE 1149.1 in

BGA-208 and BGA-256 packages

Single 2.5V (±100mV) power supply for core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 256-ball Ball Grid Array, 144-pin Thin Quad

Flatpack and 208-ball fine pitch Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed access

◆

– Commercial:8/10/12/15ns(max.)

– Industrial: 10/12ns(max.)

◆

RapidWrite Mode simplifies high-speed consecutive write

◆

cycles

◆

Dual chip enables allow for depth expansion without

external logic

◆

IDT70T633/1 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

◆

M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

Busy and Interrupt Flags

◆

Functional Block Diagram

UBL

LBL

R/WL

R/WR

CE0L

CE0R

CE1L

CE1R

OEL

OER

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

512/256K x 18

MEMORY

ARRAY

Din_L

I/O0L- I/O17L

Din_R

I/O0R - I/O17R

(1)

18R

(1)

Address

Decoder

Address

Decoder

18L

ADDR_L

ADDR_R

TDI

TCK

TMS

TRST

JTAG

OER

ARBITRATION

TDO

INTERRUPT

SEMAPHORE

LOGIC

CE0R

CE1R

CE0L

CE1L

R/WL

R/W

(2,3)

BUSY

SEM

INT

BUSY

SEM

M/S

(3)

INT

CONTROL

LOGIC

(4)

ZZR

NOTES:

1. Address A18x is a NC for IDT70T631.

2. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=VIH).

5670 drw 01

BUSY and INT are non-tri-state totem-pole outputs (push-pull).

4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INTx, M/S and the

sleep mode pins themselves (ZZx) are not affected during sleep mode.

NOVEMBER 2003

DSC-5670/3

12 3 4 5 6 7...27

中文翻译

下载PDF

与IDT70T633S8BFI相关器件

型号	品牌	获取价格	描述	数据表
IDT70T633S8DD	IDT	获取价格	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC
IDT70T633S8DDI	IDT	获取价格	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC
IDT70T651	IDT	获取价格	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC
IDT70T651S10BC	IDT	获取价格	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC
IDT70T651S10BCG	IDT	获取价格	暂无描述
IDT70T651S10BCGI	IDT	获取价格	暂无描述
IDT70T651S10BCGI8	IDT	获取价格	Dual-Port SRAM, 256KX36, 10ns, CMOS, PBGA256, BGA-256
IDT70T651S10BCI	IDT	获取价格	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC
IDT70T651S10BCI8	IDT	获取价格	Dual-Port SRAM, 256KX36, 10ns, CMOS, PBGA256, BGA-256
IDT70T651S10BF	IDT	获取价格	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC

与IDT70T633S8BFI相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

15
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

17
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

41
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

49

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT70T633S8BFI

IDT70T633S8BFI 数据手册

与IDT70T633S8BFI相关器件

与IDT70T633S8BFI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT70T633S8BFI

IDT70T633S8BFI 数据手册

与IDT70T633S8BFI相关器件

与IDT70T633S8BFI相关文章

您还可以找

您在本页遇到什么问题？