Datasheet > IDT70T633S12DD8

IDT70T633S12DD8

更新时间： 2024-10-30 04:26:03

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
27页	227K
描述
Multi-Port SRAM, 512KX18, 12ns, CMOS, PQFP144

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中文翻译

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IDT70T633S12DD8 数据手册

IDT70T633/1S

HIGH-SPEED 2.5V

512/256K x 18

ASYNCHRONOUS DUAL-PORT

STATIC RAM

WITH 3.3V 0R 2.5V INTERFACE

◆

Features

Full hardware support of semaphore signaling between

ports on-chip

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed access

◆

On-chip port arbitration logic

◆

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Sleep Mode Inputs on both ports

Supports JTAG features compliant to IEEE 1149.1 in

BGA-208 and BGA-256 packages

Single 2.5V (±100mV) power supply for core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 256-ball Ball Grid Array, 144-pin Thin Quad

Flatpack and 208-ball fine pitch Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

– Commercial:8/10/12/15ns(max.)

– Industrial:10/12ns (max.)

◆

RapidWrite Mode simplifies high-speed consecutive write

◆

cycles

◆

Dual chip enables allow for depth expansion without

external logic

◆

IDT70T633/1 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

◆

M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

Busy and Interrupt Flags

◆

Green parts available, see ordering information

Functional Block Diagram

UBL

LBL

R/WL

R/WR

CE0L

CE0R

CE1L

CE1R

OEL

OER

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

512/256K x 18

MEMORY

ARRAY

Din_L

I/O0L- I/O17L

Din_R

I/O0R - I/O17R

(1)

18R

(1)

Address

Decoder

Address

Decoder

18L

ADDR_L

ADDR_R

TDI

TCK

TMS

TRST

JTAG

OER

ARBITRATION

TDO

INTERRUPT

SEMAPHORE

LOGIC

CE0R

CE1R

CE0L

CE1L

R/WL

R/W

(2,3)

BUSY

SEM

INT

BUSY

SEM

M/S

(3)

INT

CONTROL

LOGIC

(4)

ZZR

NOTES:

1. Address A18x is a NC for IDT70T631.

5670 drw 01

2. BUSY is an input as a Slave (M/S=V^IL) and an output when it is a Master (M/S=VIH).

BUSY and INT are non-tri-state totem-pole outputs (push-pull).

4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INTx, M/S and the

sleep mode pins themselves (ZZx) are not affected during sleep mode.

JANUARY 2006

DSC-5670/5

12 3 4 5 6 7...27

中文翻译

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与IDT70T633S12DD8相关器件

型号	品牌	获取价格	描述	数据表
IDT70T633S12DDG	IDT	获取价格	Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144
IDT70T633S12DDGI	IDT	获取价格	Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144
IDT70T633S12DDGI8	IDT	获取价格	Multi-Port SRAM, 512KX18, 12ns, CMOS, PQFP144
IDT70T633S12DDI	IDT	获取价格	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC
IDT70T633S12DDI8	IDT	获取价格	Multi-Port SRAM, 512KX18, 12ns, CMOS, PQFP144
IDT70T633S15BC	IDT	获取价格	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC
IDT70T633S15BC8	IDT	获取价格	Dual-Port SRAM, 512KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-
IDT70T633S15BCG8	IDT	获取价格	Multi-Port SRAM, 512KX18, 15ns, CMOS, PBGA256
IDT70T633S15BCI	IDT	获取价格	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC
IDT70T633S15BF	IDT	获取价格	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC

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