是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | BGA, BGA256,16X16,40 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.28 |
最长访问时间: | 12 ns | 最大时钟频率 (fCLK): | 166 MHz |
I/O 类型: | COMMON | JESD-30 代码: | S-PBGA-B256 |
JESD-609代码: | e0 | 内存密度: | 2359296 bit |
内存集成电路类型: | APPLICATION SPECIFIC SRAM | 内存宽度: | 18 |
端口数量: | 2 | 端子数量: | 256 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX18 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA256,16X16,40 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 2.5,2.5/3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.02 A | 最小待机电流: | 2.4 V |
子类别: | SRAMs | 最大压摆率: | 0.51 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT70T3399S166BF | IDT |
获取价格 |
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTER | |
IDT70T3399S166BFG | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 3.6ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, | |
IDT70T3399S166BFG8 | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, F | |
IDT70T3399S166BFGI | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 12ns, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FINE PI | |
IDT70T3399S166BFI | IDT |
获取价格 |
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTER | |
IDT70T3399S166DD | IDT |
获取价格 |
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTER | |
IDT70T3399S166DDG | IDT |
获取价格 |
暂无描述 | |
IDT70T3399S166DDGI | IDT |
获取价格 |
暂无描述 | |
IDT70T3399S166DDI | IDT |
获取价格 |
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTER | |
IDT70T3399S200BC | IDT |
获取价格 |
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTER |