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IDT7052S25GGM PDF预览

IDT7052S25GGM

更新时间: 2024-02-27 19:18:40
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
11页 112K
描述
Application Specific SRAM, 2KX8, 25ns, CMOS, CPGA108

IDT7052S25GGM 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84Is Samacsys:N
最长访问时间:25 nsI/O 类型:COMMON
JESD-30 代码:S-XPGA-P108JESD-609代码:e3
内存密度:16384 bit内存集成电路类型:APPLICATION SPECIFIC SRAM
内存宽度:8端口数量:4
端子数量:108字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:2KX8输出特性:3-STATE
封装主体材料:CERAMIC封装代码:PGA
封装等效代码:PGA108,12X12封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified最大待机电流:0.03 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.36 mA标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:MATTE TIN
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR处于峰值回流温度下的最长时间:30
Base Number Matches:1

IDT7052S25GGM 数据手册

 浏览型号IDT7052S25GGM的Datasheet PDF文件第2页浏览型号IDT7052S25GGM的Datasheet PDF文件第3页浏览型号IDT7052S25GGM的Datasheet PDF文件第4页浏览型号IDT7052S25GGM的Datasheet PDF文件第5页浏览型号IDT7052S25GGM的Datasheet PDF文件第6页浏览型号IDT7052S25GGM的Datasheet PDF文件第7页 
IDT7052S/L  
HIGH-SPEED  
2K x 8 FourPortTM  
STATIC RAM  
Features  
Battery backup operation2V data retention  
TTL-compatible; single 5V (±10%) power supply  
High-speed access  
– Commercial:20/25/35ns (max.)  
Industrial:25ns (max.)  
Available in 120 pin and 132 pin Thin Quad Flatpacks and  
108 pin PGA  
Military product compliant to MIL-PRF-38535 QML  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Military:25/35ns(max.)  
Low-power operation  
IDT7052S  
Active:750mW(typ.)  
Standby: 7.5mW (typ.)  
IDT7052L  
Green parts available, see ordering information  
Active:750mW(typ.)  
Standby: 1.5mW (typ.)  
True FourPort memory cells which allow simultaneous  
access of the same memory locations  
Fully asynchronous operation from each of the four ports:  
Description  
TheIDT7052isahigh-speed2Kx8FourPort™StaticRAMdesigned  
to be used in systems where multiple access into a common RAM is  
required.ThisFourPortStaticRAMoffersincreasedsystemperformance  
inmultiprocessorsystemsthathaveaneedtocommunicateinrealtimeand  
alsooffersaddedbenefitforhigh-speedsystemsinwhichmultipleaccess  
is requiredinthe same cycle.  
P1, P2, P3, P4  
Versatile control for write-inhibit: separate BUSY input to  
control write-inhibit for each of the four ports  
FunctionalBlockDiagram  
R/WP1  
CEP1  
R/WP4  
CEP4  
OEP1  
OEP4  
COLUMN  
I/O  
COLUMN  
I/O0P1-I/O7P1  
BUSYP1  
I/O0P4-I/O7P4  
I/O  
BUSYP4  
PORT 1  
PORT 4  
ADDRESS  
DECODE  
LOGIC  
ADDRESS  
A0P1 - A10P1  
A0P4 - A10P4  
DECODE  
LOGIC  
MEMORY  
ARRAY  
PORT 2  
ADDRESS  
DECODE  
LOGIC  
PORT 3  
ADDRESS  
DECODE  
LOGIC  
A0P2 - A10P2  
A0P3 - A10P3  
BUSYP2  
BUSYP3  
COLUMN  
I/O  
COLUMN  
I/O  
I/O0P2-I/O7P2  
I/O0P3-I/O7P3  
OEP2  
OEP3  
CEP2  
R/WP2  
CEP3  
R/WP3  
2674 drw 01  
JULY 2006  
1
DSC 2674/12  
©2006IntegratedDeviceTechnology,Inc.  

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