5秒后页面跳转
IDT6167LA100EB PDF预览

IDT6167LA100EB

更新时间: 2024-11-11 21:10:35
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
8页 65K
描述
Standard SRAM, 16KX1, 100ns, CMOS, CDFP20, 0.300 INCH, CERPACK-20

IDT6167LA100EB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DFP包装说明:0.300 INCH, CERPACK-20
针数:20Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.91最长访问时间:100 ns
I/O 类型:SEPARATEJESD-30 代码:R-GDFP-F20
JESD-609代码:e0内存密度:16384 bit
内存集成电路类型:STANDARD SRAM内存宽度:1
功能数量:1端口数量:1
端子数量:20字数:16384 words
字数代码:16000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:16KX1输出特性:3-STATE
可输出:NO封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DFP封装等效代码:FL20,.3
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B座面最大高度:2.3368 mm
最小待机电流:2 V子类别:SRAMs
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6.9215 mm
Base Number Matches:1

IDT6167LA100EB 数据手册

 浏览型号IDT6167LA100EB的Datasheet PDF文件第2页浏览型号IDT6167LA100EB的Datasheet PDF文件第3页浏览型号IDT6167LA100EB的Datasheet PDF文件第4页浏览型号IDT6167LA100EB的Datasheet PDF文件第5页浏览型号IDT6167LA100EB的Datasheet PDF文件第6页浏览型号IDT6167LA100EB的Datasheet PDF文件第7页 
IDT6167SA  
IDT6167LA  
CMOS STATIC RAM  
16K (16K x 1-BIT)  
Integrated Device Technology, Inc.  
Access times as fast as 15ns are available. The circuit also  
offers a reduced power standby mode. When CSgoes HIGH,  
the circuit will automatically go to, and remain in, a standby  
mode as long as CS remains HIGH. This capability provides  
significant system-level power and cooling savings. The low-  
power (LA) version also offers a battery backup data retention  
capability where the circuit typically consumes only 1µW  
operating off a 2V battery.  
FEATURES:  
• High-speed (equal access and cycle time)  
— Military: 15/20/25/35/45/55/70/85/100ns (max.)  
— Commercial: 15/20/25/35ns (max.)  
• Low power consumption  
• Battery backup operation — 2V data retention voltage  
(IDT6167LA only)  
• Available in 20-pin CERDIP and Plastic DIP, 20-pin  
CERPACK, 20-pin SOJ and 20-pin leadless chip carrier  
• Produced with advanced CMOS high-performance  
technology  
All inputs and the output of the IDT6167 are TTL-compat-  
ible and operate from a single 5V supply, thus simplifying  
system designs.  
TheIDT6167ispackagedinaspace-saving20-pin, 300mil  
PlasticDIPorCERDIP,Plastic20-pin SOJ,20-pin CERPACK  
and 20-pin leadless chip carrier, providing high board-level  
packing densities.  
• CMOS process virtually eliminates alpha particle soft-  
error rates  
• Separate data input and output  
• Military product compliant to MIL-STD-883, Class B  
Military grade product is manufactured in compliance with  
the latest revision of MIL-STD-883, Class B, making it ideally  
suited to military temperature applications demanding the  
highest level of performance and reliability.  
DESCRIPTION:  
The lDT6167 is a 16,384-bit high-speed static RAM orga-  
nized as 16K x 1. The part is fabricated using IDT’s high-  
performance, high reliability CMOS technology.  
FUNCTIONAL BLOCK DIAGRAM  
A0  
VCC  
GND  
16,384-BIT  
MEMORY ARRAY  
ADDRESS  
DECODE  
A13  
DIN  
DOUT  
I/O CONTROL  
CS  
CONTROL  
LOGIC  
WE  
2981 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
MAY 1994  
1994 Integrated Device Technology, Inc.  
DSC-1007/4  
5.1  
1

与IDT6167LA100EB相关器件

型号 品牌 获取价格 描述 数据表
IDT6167LA100P IDT

获取价格

CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167LA100PB IDT

获取价格

CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167LA100Y IDT

获取价格

CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167LA100YB IDT

获取价格

CMOS STATIC RAM 16K (16K x 1-BIT)
IDT6167LA12D ETC

获取价格

x1 SRAM
IDT6167LA12E ETC

获取价格

x1 SRAM
IDT6167LA12F ETC

获取价格

x1 SRAM
IDT6167LA12L ETC

获取价格

x1 SRAM
IDT6167LA12P ETC

获取价格

x1 SRAM
IDT6167LA12SO ETC

获取价格

x1 SRAM