5秒后页面跳转
IDT61298SA15Y PDF预览

IDT61298SA15Y

更新时间: 2024-11-05 22:36:51
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
7页 71K
描述
CMOS STATIC RAM 256K (64K x 4-BIT)

IDT61298SA15Y 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:0.300 INCH, SOJ-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.56最长访问时间:15 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J28
JESD-609代码:e0长度:17.9324 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:4湿度敏感等级:3
功能数量:1端口数量:1
端子数量:28字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX4输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ28,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V认证状态:Not Qualified
座面最大高度:3.556 mm最大待机电流:0.02 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.14 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.5184 mm

IDT61298SA15Y 数据手册

 浏览型号IDT61298SA15Y的Datasheet PDF文件第2页浏览型号IDT61298SA15Y的Datasheet PDF文件第3页浏览型号IDT61298SA15Y的Datasheet PDF文件第4页浏览型号IDT61298SA15Y的Datasheet PDF文件第5页浏览型号IDT61298SA15Y的Datasheet PDF文件第6页浏览型号IDT61298SA15Y的Datasheet PDF文件第7页 
IDT61298SA  
CMOS STATIC RAM  
256K (64K x 4-BIT)  
Integrated Device Technology, Inc.  
FEATURES:  
• 64K x 4 high-speed static RAM  
DESCRIPTION:  
The lDT61298SA is a 262,144-bit high-speed static RAM  
• Fast Output Enable (OE) pin available for added system organized as 64K x 4. It is fabricated using IDT’s high-  
flexibility  
performance,high-reliabilityCMOStechnology.Thisstate-of-  
the-art technology, combined with innovative circuit design  
techniques, provides a cost-effective approach for memory  
intensive applications.  
• High speed (equal access and cycle times)  
— Commercial: 12/15 ns (max.)  
• JEDEC standard pinout  
• 300 mil 28-pin SOJ  
The IDT61298SA features two memory control functions:  
Chip Select (CS) and Output Enable (OE). These two func-  
tions greatly enhance the IDT61298SA's overall flexibility in  
high-speed memory applications.  
Accesstimesasfastas12nsareavailable.TheIDT61298SA  
offers a reduced power standby mode, ISB1, which enables  
the designer to considerably reduce device power require-  
ments. This capability significantly decreases system power  
and cooling levels, while greatly enhancing system reliability.  
All inputs and outputs are TTL-compatible and the device  
operatesfromasingle5voltsupply. Fullystaticasynchronous  
• Produced with advanced CMOS technology  
• Bidirectional data inputs and outputs  
• Inputs/Outputs TTL-compatible  
• Three-state outputs  
• Military product compliant to MIL-STD-883, Class B  
FUNCTIONAL BLOCK DIAGRAM  
A0  
VCC  
GND  
D
E
C
O
D
E
R
262,144-BIT  
MEMORY ARRAY  
A15  
I/O0  
I/O CONTROL  
I/O1  
INPUT  
DATA  
CONTROL  
I/O2  
I/O3  
CS  
WE  
OE  
2971 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
COMMERCIAL TEMPERATURE RANGES  
1996 Integrated Device Technology, Inc.  
MAY 1996  
DSC-2971/6  
7.1  
1

IDT61298SA15Y 替代型号

型号 品牌 替代类型 描述 数据表
CY7C192-15VXCT CYPRESS

功能相似

Standard SRAM, 64KX4, 15ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, MO-088, SOJ-28

与IDT61298SA15Y相关器件

型号 品牌 获取价格 描述 数据表
IDT61298SA15Y8 IDT

获取价格

Standard SRAM, 64KX4, 15ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IDT61298SA17L8 IDT

获取价格

Standard SRAM, 64KX4, 17ns, CMOS, CQCC28, 0.300 INCH, LCC-28
IDT61298SA17TC IDT

获取价格

Standard SRAM, 64KX4, 17ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, DIP-28
IDT61298SA17TP IDT

获取价格

Standard SRAM, 64KX4, 17ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
IDT61298SA17Y ETC

获取价格

x4 SRAM
IDT61298SA17Y8 IDT

获取价格

Standard SRAM, 64KX4, 17ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IDT61298SA20L8 IDT

获取价格

Standard SRAM, 64KX4, 20ns, CMOS, CQCC28, 0.300 INCH, LCC-28
IDT61298SA20LB IDT

获取价格

Standard SRAM, 64KX4, 20ns, CMOS, CQCC28, LCC-28
IDT61298SA20LB8 IDT

获取价格

Standard SRAM, 64KX4, 20ns, CMOS, CQCC28, LCC-28
IDT61298SA20TC IDT

获取价格

Standard SRAM, 64KX4, 20ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, DIP-28