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IDT6116SA15SOG8 PDF预览

IDT6116SA15SOG8

更新时间: 2024-11-27 14:51:23
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 103K
描述
Standard SRAM, 2KX8, 15ns, CMOS, PDSO24, 0.300 INCH, SOIC-24

IDT6116SA15SOG8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP24,.4针数:24
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.21
最长访问时间:15 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G24JESD-609代码:e3
长度:15.4 mm内存密度:16384 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端口数量:1端子数量:24
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP24,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:2.65 mm
最大待机电流:0.002 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.15 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.5 mm
Base Number Matches:1

IDT6116SA15SOG8 数据手册

 浏览型号IDT6116SA15SOG8的Datasheet PDF文件第2页浏览型号IDT6116SA15SOG8的Datasheet PDF文件第3页浏览型号IDT6116SA15SOG8的Datasheet PDF文件第4页浏览型号IDT6116SA15SOG8的Datasheet PDF文件第5页浏览型号IDT6116SA15SOG8的Datasheet PDF文件第6页浏览型号IDT6116SA15SOG8的Datasheet PDF文件第7页 
CMOS Static RAM  
16K (2K x 8-Bit)  
IDT6116SA  
IDT6116LA  
Features  
Description  
High-speed access and chip select times  
TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganized  
as2Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOS  
technology.  
– Military:20/25/35/45/55/70/90/120/150ns(max.)  
– Industrial:20/25ns(max.)  
– Commercial:15/20/25ns(max.)  
Low-power consumption  
Battery backup operation  
– 2V data retention voltage (LA version only)  
Produced with advanced CMOS high-performance  
technology  
CMOS process virtually eliminates alpha particle soft-error Woperatingoffa2Vbattery.  
Access times as fast as 15ns are available. The circuit also offers a  
reduced power standby mode. When CS goes HIGH, the circuit will  
automaticallygoto,andremainin,astandbypowermode,aslongasCS  
remainsHIGH.Thiscapabilityprovidessignificantsystemlevelpowerand  
coolingsavings. Thelow-power(LA)versionalsooffersabatterybackup  
dataretentioncapabilitywherethecircuittypicallyconsumesonly1µWto  
rates  
AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully  
staticasynchronouscircuitryisused,requiringnoclocksorrefreshingfor  
operation.  
TheIDT6116SA/LAispackagedin24-pin300milplasticDIP,24-pin  
600miland300milceramicDIP,or24-leadgull-wingSOICprovidinghigh  
board-levelpackingdensities.  
Input and output directly TTL-compatible  
Static operation: no clocks or refresh required  
Availableinceramic24-pinDIP,ceramicandplastic24-pinThin  
Dip and 24-pin SOIC  
Military product compliant to MIL-STD-833, Class B  
Militarygradeproductismanufacturedincomplianceto MIL-STD-883,  
Class B, making it ideally suited to military temperature applications  
demandingthehighestlevelofperformanceandreliability.  
FunctionalBlockDiagram  
A0  
CC  
V
128 X 128  
MEMORY  
ARRAY  
ADDRESS  
DECODER  
GND  
A10  
I/O0  
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
OE  
WE  
CONTROL  
CIRCUIT  
3089 drw 01  
FEBRUARY 2013  
1
©2013IntegratedDeviceTechnology,Inc.  
DSC-3089/08  

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