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IDT6116LA20YGI8 PDF预览

IDT6116LA20YGI8

更新时间: 2024-09-25 05:04:47
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 111K
描述
Standard SRAM, 2KX8, 20ns, CMOS, PDSO24

IDT6116LA20YGI8 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J24内存密度:16384 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:24字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ24,.34封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
最大待机电流:0.00002 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.12 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL

IDT6116LA20YGI8 数据手册

 浏览型号IDT6116LA20YGI8的Datasheet PDF文件第2页浏览型号IDT6116LA20YGI8的Datasheet PDF文件第3页浏览型号IDT6116LA20YGI8的Datasheet PDF文件第4页浏览型号IDT6116LA20YGI8的Datasheet PDF文件第5页浏览型号IDT6116LA20YGI8的Datasheet PDF文件第6页浏览型号IDT6116LA20YGI8的Datasheet PDF文件第7页 
CMOS Static RAM  
16K (2K x 8-Bit)  
IDT6116SA  
IDT6116LA  
Features  
Description  
High-speed access and chip select times  
The IDT6116SA/LA is a 16,384-bit high-speed static RAM  
organized as 2K x 8. It is fabricated using IDT's high-performance,  
high-reliabilityCMOStechnology.  
Military:20/25/35/45/55/70/90/120/150ns(max.)  
Industrial:20/25/35/45ns(max.)  
– Commercial:15/20/25/35/45ns(max.)  
Low-power consumption  
Battery backup operation  
– 2V data retention voltage (LA version only)  
Produced with advanced CMOS high-performance  
technology  
CMOS process virtually eliminates alpha particle soft-error consumesonly1µWto4µWoperatingoffa2Vbattery.  
Access times as fastas 15ns are available. The circuitalsooffers a  
reduced power standby mode. When CS goes HIGH, the circuit will  
automatically go to, and remain in, a standby power mode, as long  
as CS remains HIGH. This capability provides significant system level  
power and cooling savings. The low-power (LA) version also offers a  
battery backup data retention capability where the circuit typically  
rates  
AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully  
static asynchronous circuitry is used, requiring no clocks or refreshing  
foroperation.  
TheIDT6116SA/LAispackagedin24-pin600and300milplasticor  
ceramicDIP,24-leadgull-wingSOIC,and24-leadJ-bendSOJproviding  
highboard-levelpackingdensities.  
Input and output directly TTL-compatible  
Static operation: no clocks or refresh required  
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,  
24-pin SOIC and 24-pin SOJ  
Military product compliant to MIL-STD-833, Class B  
Military grade product is manufactured in compliance to the latest  
version of MIL-STD-883, Class B, making it ideally suited to military  
temperatureapplicationsdemandingthehighestlevelofperformanceand  
reliability.  
FunctionalBlockDiagram  
A
0
CC  
V
128 X 128  
MEMORY  
ARRAY  
ADDRESS  
DECODER  
GND  
A 10  
0
I/O  
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
OE  
WE  
CONTROL  
CIRCUIT  
3089 drw 01  
NOVEMBER 2006  
1
©2006 IntegratedDeviceTechnology,Inc.  
DSC-3089/06  

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