Datasheet > IDDD10G65C6

IDDD10G65C6

更新时间： 2024-04-09 18:40:58

品牌	Logo	应用领域
英飞凌 - INFINEON		开关 PC 服务器电信高压功率因数校正肖特基二极管
页数	文件大小	规格书
9页	661K
描述
英飞凌现创新推出双 DPAK (DDPAK)，这是首款顶部冷却 SMD 封装，主要面向大功率 SMPS 应用，如 PC 电源、太阳能、服务器和电信设备等应用。现有高压技术的优点?CoolSiC? 肖特基二极管 650V G6?结合了顶部冷却的创新概念，为 PFC 等高电流硬开关拓扑提供了系统解决方案，为 LLC 拓扑提供了高端高效解决方案。

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IDDD10G65C6 数据手册

IDDD10G65C6

6^thGeneration CoolSiC™

650V SiC Schottky Diode

The CoolSiC™ generation ꢀ ꢁGꢀꢂ is the leading edge technology from Infineon for the SiC Schottky barrier

diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further

advancements like a novel Schottky metal system. The result is a family of products with improved efficiency

over all load conditions, resulting from a lower figure of merit (Q_cx V_Fꢂ. The CoolSiC™ Schottky diode ꢀꢃꢄ V Gꢀ

has been designed to complement our ꢀꢄꢄ V and ꢀꢃꢄ V CoolMOS™ ꢅ families, meeting the most stringent

application requirements in this voltage range.

Table 1

Key performance parameters

PG-HDSOP-10-1

Parameter

V_RRM

Value

650

Unit

Cathode

Q_C(V_R= 400 V)

E_C(V_R= 400 V)

14.7

2.7

µJ

I_F(T_C≤ ꢆꢃ0 °C, D = 1)

V_F(I_F= 10 A, T_j= 25 °C)

1.25

Pin 6-10

Pin 3-5

Pin 1-2: n.c.

Table 2

Package information

Pin 3-5: Anode

Pin 6-10: Cathode

Type / ordering Code

IDDD10G65C6

Package

Marking

PG-HDSOP-10-1 D1065C6

Features



Best in class forward voltage (1.25 V)

Best in class figure of merit (Q_cx V_F)

High dv/dt ruggedness (150 V/ns)

Benefits



System efficiency improvement

System cost and size savings due to the reduced cooling requirements

Enabling higher frequency and increased power density

Potential Applications



Power factor correction in SMPS

Solar inverter

Uninterruptible power supply

Product Validation



Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)

Final Datasheet

Please read the Important Notice and Warnings at the end of this document

Rev. 2.0, 2018-02-06

12 3 4 5 6 7...9

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