生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最长访问时间: | 200 ns |
其他特性: | CONFIGURABLE AS 2M X 16 | JESD-30 代码: | X-XXMA-X66 |
内存密度: | 33554432 bit | 内存集成电路类型: | SRAM CARD |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 66 | 字数: | 4194304 words |
字数代码: | 4000000 | 组织: | 4MX8 |
封装主体材料: | UNSPECIFIED | 封装形状: | UNSPECIFIED |
封装形式: | MICROELECTRONIC ASSEMBLY | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.75 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ID221205 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 50A I(C) | |
ID221210 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) | |
ID221275 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 75A I(C) | |
ID2212A2 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) | |
ID221K05 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, | |
ID221K10 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 100A I(C) | |
ID221K75 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 75A I(C) | |
ID221KA2 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C) | |
ID222XX | SHARP |
获取价格 |
MASK ROM, 256KX8, 130ns, CMOS, | |
ID223XX | SHARP |
获取价格 |
MASK ROM, 512KX8, 130ns, CMOS, |