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ICTE-18 PDF预览

ICTE-18

更新时间： 2024-01-05 10:25:33
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管
页数 文件大小 规格书
8页 63K
描述
1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors

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中文翻译

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ICTE-18 技术参数

生命周期：Obsolete包装说明：O-PALF-W2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.52
最小击穿电压：21.2 V外壳连接：ISOLATED
最大钳位电压：25.5 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM极性：BIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：18 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

ICTE-18 数据手册

 浏览型号ICTE-18的Datasheet PDF文件第2页浏览型号ICTE-18的Datasheet PDF文件第3页浏览型号ICTE-18的Datasheet PDF文件第4页浏览型号ICTE-18的Datasheet PDF文件第5页浏览型号ICTE-18的Datasheet PDF文件第6页浏览型号ICTE-18的Datasheet PDF文件第7页 
1N6373 - 1N6381 Series  
(ICTE-5 - ICTE-36,  
MPTE-5 - MPTE-45)  
1500 Watt Peak Power  
Mosorb Zener Transient  
Voltage Suppressors  
http://onsemi.com  
Unidirectional*  
Cathode  
Anode  
Mosorb devices are designed to protect voltage sensitive  
components from high voltage, high–energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. These devices are  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetic axial leaded package and are ideally-suited for use in  
communication systems, numerical controls, process controls,  
medical equipment, business machines, power supplies and many  
other industrial/consumer applications, to protect CMOS, MOS and  
Bipolar integrated circuits.  
AXIAL LEAD  
CASE 41A  
PLASTIC  
L
MPTE  
–xx  
1N  
63xx  
YYWW  
Specification Features:  
• Working Peak Reverse Voltage Range – 5 V to 45 V  
• Peak Power – 1500 Watts @ 1 ms  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 mA Above 10 V  
L
ICTE  
–xx  
YYWW  
L = Assembly Location  
MPTE–xx = ON Device Code  
ICTE–xx = ON Device Code  
1N63xx = JEDEC Device Code  
YY = Year  
• Response Time is Typically < 1 ns  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
WW = Work Week  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
230°C, 1/16″ from the case for 10 seconds  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
ORDERING INFORMATION  
Device  
Package  
Shipping  
500 Units/Box  
MPTE–xx  
Axial Lead  
MAXIMUM RATINGS  
MPTE–xxRL4  
Axial Lead 1500/Tape & Reel  
Rating  
Symbol  
Value  
Unit  
ICTE–xx  
Axial Lead  
500 Units/Box  
Peak Power Dissipation (Note 1.)  
P
PK  
1500  
Watts  
@ T ≤ 25°C  
L
ICTE–xxRL4  
Axial Lead 1500/Tape & Reel  
Steady State Power Dissipation  
P
D
5.0  
Watts  
1N63xx  
Axial Lead  
500 Units/Box  
@ T ≤ 75°C, Lead Length = 3/8″  
L
Derated above T = 75°C  
20  
20  
mW/°C  
°C/W  
L
1N63xxRL4*  
Axial Lead 1500/Tape & Reel  
Thermal Resistance, Junction–to–Lead  
Forward Surge Current (Note 2.)  
R
I
q
JL  
NOTES:  
200  
Amps  
1. Nonrepetitive current pulse per Figure 5 and der-  
FSM  
ated above T = 25°C per Figure 2.  
@ T = 25°C  
A
A
2. 1/2 sine wave (or equivalent square wave), PW =  
8.3 ms, duty cycle = 4 pulses per minute maxi-  
mum.  
Operating and Storage  
Temperature Range  
T , T  
– 65 to  
+175  
°C  
J
stg  
*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)  
for Bidirectional Devices  
*1N6378 Not Available in 1500/Tape & Reel  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
June, 2002 – Rev. 2  
1N6373/D  
12345678

中文翻译

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ICTE-18 替代型号

型号 品牌 替代类型 描述 数据表
SMAJ170CA STMICROELECTRONICS

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 400 W, 170 V TVS in SMA

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ICTE-18/4G VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, PLA
ICTE-18/53 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-18/53-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-18/54 VISHAY

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 		Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional,
ICTE-18/56 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
ICTE-18/56-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su

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