Datasheet > ICP2637-Power-Amplifier

ICP2637-Power-Amplifier

更新时间： 2023-12-06 20:06:20

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	446K
描述
Microchip's ICP2637 is a 3 stage MMIC power amplifier fabricated using GaN on SiC technology. The

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ICP2637

23-31GHz 5W GaN PAMMIC

Product Overview

ICONICRF’s ICP2637 is a three stage MMIC power amplifier in bare die form, fabricated using GaN on SiC

technology. The PA operates from 23-31GHz with 37dBm output power, 25% PAE and 23dB small signal gain.

The die has integrated DC blocking capacitors and is matched to 50ohms on the RF input and output ports.

The operating frequency provides flexible operation for a variety of applications including satellite and 5G. The

ICP2637P is 100% DC and RF tested on-wafer to ensure compliance with electrical specifications.

Functional Block Diagram

Key Features

• Frequency Range: 23-31GHz

• Pout: 37dBm @ 19dBm Pin

• PAE: 25%

• Small Signal Gain: 23dB

• Bias: VD=28V IDQ=84mA

• Technology: GaN onSiC

• Lead-free and RoHS compliant

• Integrated Power Detector

• Chip Dimensions: 3.1x1.78x0.05mm

RF OUT

RF IN

Applications

•

Satellite Communications

Aerospace & Defense

Electrical Specifications | Test Conditionsunless otherwise stated| V_D=28V, I_D=84mA, TA=25 ^oC, CW

Min

Typ

Max

Units

Frequency

GHz

dBm

Output Power @P_sat

PAE @ P_sat

Pin=19dBm

Small Signal Gain

Input Return Loss

Output Return Loss

I_DQ

and its subsidiaries

Page 1

Datasheet Rev E

12 3 4 5 6 7 8

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