Datasheet > ICP1639-Power-Amplifier

ICP1639-Power-Amplifier

更新时间： 2023-12-06 20:08:02

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
6页	818K
描述
The ICP1639-DIE is a three stage GaAs power amplifier MMIC with an operating frequency 14.5-17.5GH

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14.5-17.5GHz 8W GaN PA MMIC

ICP1639

Features

Functional Diagram

•

8W Power Amplifier.

39 dBm Saturated Pulsed Output Power.

20dB small signal gain.

Bare Die with dual sided bias.

100% on-wafer DC& RF Power tested

100% visual inspection to MIL-STD-883

Application

•

Communication systems

Radar applications

Description

The ICP1639-DIE is a three stage GaAs power

amplifier MMIC with an operating frequency 14.5-

17.5GHz. The PA has a pulsed saturated output

power of 39dBm and a gain of 20dB.

Electrical Specifications: Freq. = 14.5-17.5GHz, T_A= 25°C, Duty Cycle 5% Pin = 23dBm

Gain

—

+/-1.0

10.0

6.0

—

Gain Flatness

Input Return Loss

Output Return Loss

Output Power 3dB

14.5-15GHz

15.0-17.5GHz

35.0

37.5

39.0

dBm

—

Drain Bias Voltage

Gate Bias Voltage

Current

—

8.0

-0.9

5.0

—

7.0

Absolute Maximum Ratings

Ordering Information

Part No.

Max Input Power

Drain Voltage

+30 dBm

ICP1639-1-110I

Bare die in Gel-Pack trays

+8.5 V

7.5A

ICP1639-1-503U Evaluation Board with K-Type connectors

Drain Current

Gate Voltage

-0.5V < V_G<-2V

-40°C to +85°C

+175°C

Operating Temperature

Junction Temperature

Storage Temperature

-65°C to +165°C

Exceeding any one or combination of these limits may cause

permanent damage to this device.

IconicRF does not recommend sustained operation near these

survivability limits.

MTTF>1x10⁶hours at nominal operating conditions T_J<+175ºC

ICONIC RF Ltd

Innovation Factory, 385 Springfield

Road, Belfast, BT12 7DG, United King-

Datasheet Rev. A

Page 1

12 3 4 5 6

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