Datasheet > ICP1137-Power-Amplifier

ICP1137-Power-Amplifier

更新时间： 2023-12-06 20:09:01

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
11页	2211K
描述
Microchip's ICP1137 is a 2 stage MMIC power amplifier in bare die form, fabricated using GaN on Si

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2-18GHz 5W GaN PA MMIC

ICP1137

Features

Image

•

Frequency Range: 2-18GHz

Pout: 37dBm @ 26dBm Pin

PAE: 20 %

Small Signal Gain: 18dB

Bias: VD=24V IDQ=114mA

Technology: GaN on SiC

Lead-free and RoHS compliant

Die Size = 4.7 mm x 3.0 mm

Applications

RF OUT

RF IN

•

Test and measurement

Aerospace & Defense

Description

ICONICRF’s ICP1137 is a 2 stage MMIC power amplifier in bare die form, fabricated using GaN on SiC

technology. ICP1137 operates from 2-18GHz with 37dBm output power, 20% PAE and 18dB small signal gain.

ICP1137 is well suited to both commercial, test and measurement and defense applications.

Electrical Specifications

Min

Typ

Max

Units

GHz

dBm

Frequency

Output Power @ P_sat

PAE @ P_sat

Pin=26dBm

Small Signal Gain

Input Return Loss

Output Return Loss

(1) Test conditions unless otherwise stated V_D=24V, I_DQ=114mA ,TA=25 ^oC, CW

ICONIC RF Ltd

Innovation Factory, 385 Springfield Road,

Belfast, BT12 7DG, United Kingdom

Engineering Datasheet

Rev C

Page 1

12 3 4 5 6 7...11

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