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IC62LV5128L-70B PDF预览

IC62LV5128L-70B

更新时间: 2024-11-13 04:44:15
品牌 Logo 应用领域
矽成 - ICSI /
页数 文件大小 规格书
11页 179K
描述
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

IC62LV5128L-70B 数据手册

 浏览型号IC62LV5128L-70B的Datasheet PDF文件第2页浏览型号IC62LV5128L-70B的Datasheet PDF文件第3页浏览型号IC62LV5128L-70B的Datasheet PDF文件第4页浏览型号IC62LV5128L-70B的Datasheet PDF文件第5页浏览型号IC62LV5128L-70B的Datasheet PDF文件第6页浏览型号IC62LV5128L-70B的Datasheet PDF文件第7页 
IC62LV5128L  
IC62LV5128LL  
Document Title  
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM  
Revision History  
Revision No  
History  
Draft Date  
May 1,2001  
Remark  
0A  
Initial Draft  
Preliminary  
0B  
1. Change for tPWE: 45 to 40 ns for 55 ns product  
: 60 to 40 ns for 70 ns product  
August 31,2001  
2. Change for VCC: 2.2-3.6V to 2.7-3.6V  
3.1Change for ICC test conditiomn: VCC=Max. to 3V  
3.2Change for ICC: 30 to 25mA for 55 ns product  
25 to 20mA for 70 ns porduct  
20 to 15 mA for 100 ns product  
4.1Change for VDR Min. : 1.2 to 1.5V  
4.2Change for IDR test condition: VCC=1.2 to 1.5V and IDR  
5. Change for tHZCE 25 to 20 ns for 55 ns product  
6. Change for tHZWE 33 to 30 ns for 70 ns product  
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and  
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.  
Integrated Circuit Solution Inc.  
LPSR012-0B 08/31/2001  
1

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