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IC62LV25616LL PDF预览

IC62LV25616LL

更新时间: 2024-09-25 04:44:15
品牌 Logo 应用领域
矽成 - ICSI /
页数 文件大小 规格书
11页 126K
描述
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

IC62LV25616LL 数据手册

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IC62LV25616L  
IC62LV25616LL  
Document Title  
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM  
Revision History  
Revision No  
History  
Draft Date  
May 1,2001  
Remark  
0A  
Initial Draft  
Preliminary  
0B  
1. Change for tPWE: 45 to 40 ns for 55 ns product  
: 60 to 40 ns for 70 ns product  
August 21,2001  
2. Change for VCC: 2.2-3.6V to 2.7-3.6V  
3.1Change for ICC test conditiomn: VCC=Max. to 3V  
3.2Change for ICC: 35 to 40mA for 55 ns commercial product  
30 to 35mA for 70 ns commercial porduct  
25 to 30 mA for 100 ns commercial product  
4. Change for ISB1 test conditions: with CE controlled only  
5.1Change for VDR Min. : 1.2 to 1.5V  
5.2Change for IDR test condition: VCC=1.2 to 1.5V  
0C  
0D  
1.Change for ICC: 40 mA to 25 mA for 55 ns  
35 mA to 20 mA for 70 ns  
January 29,2002  
30 mA to 15mA for 100 ns  
2.Change for IDR: 4µA to 5 µA for commercial/LL product  
6µA to 9 µA for Industrial/LL Product  
Change for VOH: 2.0V to 2.4V  
October 9,2002  
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and  
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.  
Integrated Circuit Solution Inc.  
LPSR013-0D10/11/2002  
1

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