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IC41LV4100-50TI PDF预览

IC41LV4100-50TI

更新时间: 2024-01-17 10:58:04
品牌 Logo 应用领域
矽成 - ICSI /
页数 文件大小 规格书
21页 300K
描述
1Mx4 bit Dynamic RAM with EDO Page Mode

IC41LV4100-50TI 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:TSOP, TSOP20/26,.36Reach Compliance Code:unknown
风险等级:5.92最长访问时间:50 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G20
JESD-609代码:e0内存密度:4194304 bit
内存集成电路类型:EDO DRAM内存宽度:4
端子数量:20字数:1048576 words
字数代码:1000000最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP20/26,.36
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:1024自我刷新:NO
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.095 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL

IC41LV4100-50TI 数据手册

 浏览型号IC41LV4100-50TI的Datasheet PDF文件第2页浏览型号IC41LV4100-50TI的Datasheet PDF文件第3页浏览型号IC41LV4100-50TI的Datasheet PDF文件第4页浏览型号IC41LV4100-50TI的Datasheet PDF文件第5页浏览型号IC41LV4100-50TI的Datasheet PDF文件第6页浏览型号IC41LV4100-50TI的Datasheet PDF文件第7页 
IC41C4100  
IC41LV4100  
Document Title  
1Mx4 bit Dynamic RAM with EDO Page Mode  
Revision History  
Revision No  
History  
Draft Date  
Remark  
0A  
Initial Draft  
September 5,2001  
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and  
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.  
Integrated Circuit Solution Inc.  
DR027-0A 09/05/2001  
1

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