Datasheet > IAUCN04S6N013T

IAUCN04S6N013T

更新时间： 2024-11-06 17:01:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	1254K
描述
This innovative TSC package enables best cooling, high power density optimized system costs

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数据手册

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IAUCN04S6N013T 数据手册

IAUCN04S6N013T

Automotive MOSFET

OptiMOS™ 6 Power-Transistor

PG-LHDSO-10-1

Features

• OptiMOS™ power MOSFET for automotive applications

• N-channel – Enhancement mode – Normal Level

• Extended qualification beyond AEC-Q101

• Enhanced electrical testing

• Robust design

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• RoHS compliant

• 100% Avalanche tested

• Top Side Cooling

Potential applications

General automotive applications.

Product validation

Qualified for automotive applications. Product validation according to AEC-Q101.

Pins 10 - 6 & Tab on Drain

Product Summary

V_DS

1.32 mΩ

230

R_DS(on)

I_D(chip limited)

Type

Package

Marking

IAUCN04S6N013T

PG-LHDSO-10-1

6C4

Data Sheet

Please read the Important Notice and Warnings at the end of this document

Rev. 1.1

www.infineon.com/mosfets

2023-08-21

12 3 4 5 6 7...12

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