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IAUC80N04S6N036 PDF预览

IAUC80N04S6N036

更新时间: 2024-11-21 14:56:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 665K
描述
Infineon introduces its latest OptiMOS?6 40V power MOS technology in the 5x6mm2 SS08 leadless package with highest quality level and robustness for automotive applications.?A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.

IAUC80N04S6N036 数据手册

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IAUC80N04S6N036  
OptiMOS- 6 Power-Transistor  
Product Summary  
VDS  
40  
3.6  
80  
V
RDS(on),max  
ID  
mW  
A
Features  
PG-TDSON-8  
• OptiMOS™ - power MOSFET for automotive applications  
• N-channel - Enhancement mode - Normal Level  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
1
1
Type  
Package  
Marking  
IAUC80N04S6N036  
PG-TDSON-8  
6N04N036  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
80  
A
T C=100°C, VGS=10V2)  
60  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
320  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=16A, R G,min=25W  
60  
16  
mJ  
A
I AS  
R G,min=25W  
VGS  
-
±20  
V
Ptot  
T C=25°C  
Power dissipation  
50  
W
°C  
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
Rev. 1.0  
page 1  
2019-04-01  

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