Datasheet > IAUC60N04S6N044

IAUC60N04S6N044

更新时间： 2024-09-16 11:13:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	666K
描述
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ) addresses the whole applications range from low-power e.g. Body applications to high-power e.g. EPS. This variety enables the customer to find the best product fit for their applications.

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IAUC60N04S6N044 数据手册

IAUC60N04S6N044

OptiMOS^™- 6 Power-Transistor

Product Summary

V_DS

4.5

R_DS(on),max

I_D

Features

PG-TDSON-8

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IAUC60N04S6N044

PG-TDSON-8

6N04N044

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

T _C=100°C, V_GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

240

48.0

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=12A, R _G,min=25W

I _AS

R _G,min=25W

V_GS

±20

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2019-04-01

12 3 4 5 6 7...9

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