Datasheet > IAUC60N04S6N031H

IAUC60N04S6N031H

更新时间： 2024-11-06 11:12:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	907K
描述
车规级MOSFET

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IAUC60N04S6N031H 数据手册

IAUC60N04S6N031H

OptiMOS^™- 6 Power-Transistor

Product Summary

V_DS

3.1

R_DS(on),max

I_D

Features

PG-TDSON-8-56

• OptiMOS™ - power MOSFET for automotive applications

• Half-Bridge - N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

IAUC60N04S6N031H PG-TDSON-8-56 6N04N031

Maximum ratings per channel, at T _j=25 °C, unless otherwise specified

Package

Marking

Value

Parameter

Symbol

Conditions

V_GS=10V,

Chip Limitation^1,2)

V_GS=10V,

DC current³⁾

Unit

I _D

Drain current

113

T_a=85°C, V_GS=10V,

R_thJAon 2s2p^2,4)

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C, t _p=100µs

311

100

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=20A, R _g,min=25Ω

I _AS

R _g,min=25Ω

V_GS

±20

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2020-09-22

12 3 4 5 6 7...10

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