Datasheet > IAUC26N10S5L245

IAUC26N10S5L245

更新时间： 2024-09-16 14:53:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	1281K
描述
The IAUC26N10S5L245 is a 24.5mR 100V MOSFET in a 5x6 mm2 SSO8 package, using Infineon’s leading OptiMOS? 5 technology. Next to others it is used in engine management, wireless charging as well as LED lighting.

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IAUC26N10S5L245 数据手册

IAUC26N10S5L245

OptiMOS^™-5 Power Transistor

Product Summary

V_DS

100

24.5

Features

R_DS(on),max

I_D

• OptiMOS™ power MOSFET for automotive applications

• N-channel - Enhancement mode - Logic Level

• MSL1 up to 260°C peak reflow

• 175 °C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

PG-TDSON-8-33

Type

Package

Marking

IAUC26N10S5L245

PG-TDSON-8-33 5N10L245

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

V _GS=10 V, Chip

limitation^1,2)

I _D

Drain current

V _GS=10V, DC current

T _a=85 °C, V _GS=10 V,

R_thJAon 2s2p ^2,3)

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

104

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=10 A

I _AS

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.1

page 1

2021-06-18

12 3 4 5 6 7...10

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