Datasheet > IAUC120N06S5L032

IAUC120N06S5L032

更新时间： 2024-11-19 11:14:55

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
10页	1010K
描述
The new OptiMOS™ 5 technology for 60V MOSFET in the industry standard SSO8 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses.

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IAUC120N06S5L032 数据手册

IAUC120N06S5L032

OptiMOS^™-5 Power Transistor

Product Summary

V_DS

3.2

120

R_DS(on),max

I_D

Features

• OptiMOS™ power MOSFET for automotive applications

• N-channel - Enhancement mode - Logic level

• MSL1 up to 260°C peak reflow

• 175 °C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

PG-TDSON-8-34

Type

Package

Marking

IAUC120N06S5L032

PG-TDSON-8-34 5N06L032

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

V_GS=10 V, Chip

limitation^1,2)

I _D

Drain current

129

V_GS=10V, DC

current³⁾

T _a=85 °C, V_GS=10 V,

R _thJAon 2s2p^2,4)

120

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25 °C, t _p= 100 µs

364

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=60 A

I _AS

100

V_GS

±16

P_tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2020-05-05

12 3 4 5 6 7...10

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