Datasheet > IAUC120N06S5L011

IAUC120N06S5L011

更新时间： 2024-11-07 11:13:55

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
12页	821K
描述
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses

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IAUC120N06S5L011 数据手册

IAUC120N06S5L011

Automotive MOSFET

OptiMOS™-5 Power-Transistor

PG-TDSON-8-53

Features

• OptiMOS™ power MOSFET for automotive applications

• N-channel – Enhancement mode – Logic Level

• Extended qualification beyond AEC-Q101

• Enhanced electrical testing

• Robust design

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Potential applications

General automotive applications.

Product validation

Qualified for automotive applications. Product validation according to AEC-Q101.

Product Summary

V_DS

1.10 mΩ

310

R_DS(on)

I_D(chip limited)

Type

Package

Marking

IAUC120N06S5L011

PG-TDSON-8-53

5N06L011

Data Sheet

Rev. 1.1

Please read the Important Notice and Warnings at the end of this document

www.infineon.com/mosfets

2022-11-21

12 3 4 5 6 7...12

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