Datasheet > IAUC120N04S6N013

IAUC120N04S6N013

更新时间： 2024-11-19 11:15:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	668K
描述
车规级MOSFET

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IAUC120N04S6N013 数据手册

IAUC120N04S6N013

OptiMOS^™- 6 Power-Transistor

Product Summary

V_DS

1.3

120

R_DS(on),max

I_D

Features

PG-TDSON-8

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IAUC120N04S6N013

PG-TDSON-8

6N04N013

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

120

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

T _C=25°C, V_GS=10V^2,3)

150

T _C=100°C, V_GS=10V²⁾

120

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

480

184

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=60A, R _G,min=25W

I _AS

R _G,min=25W

V_GS

±20

P_tot

T _C=25°C

Power dissipation

115

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2019-04-01

12 3 4 5 6 7...9

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