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IAUC120N04S6N008 PDF预览

IAUC120N04S6N008

更新时间: 2024-11-19 11:12:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 932K
描述
车规级MOSFET

IAUC120N04S6N008 数据手册

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IAUC120N04S6N008  
OptiMOS- 6 Power-Transistor  
Product Summary  
VDS  
40  
0.8  
120  
V
RDS(on),max  
ID  
mW  
A
Features  
PG-TDSON-8-43  
• OptiMOS™ - power MOSFET for automotive applications  
• N-channel - Enhancement mode - Normal Level  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
1
1
Type  
Package  
Marking  
IAUC120N04S6N008  
PG-TDSON-8-43 6N04N008  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
VGS=10V,  
Chip Limitation1,2)  
VGS=10V,  
DC current3)  
Unit  
Continuous drain current1)  
I D  
314  
120  
43  
A
Ta=85°C, VGS=10V,  
RthJA on 2s2p2,4)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
480  
400  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=60A, R G,min=25W  
mJ  
A
I AS  
R G,min=25W  
60  
VGS  
-
±20  
V
Ptot  
T C=25°C  
Power dissipation  
150  
W
°C  
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
Rev. 1.0  
page 1  
2020-08-24  

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