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IAUC120N04S6N006 PDF预览

IAUC120N04S6N006

更新时间: 2024-11-19 11:15:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 936K
描述
A portfolio of 18 products (RDS (on) max from 0,5 mΩ to 4.4 mΩ which enables the best product fit in the applications.

IAUC120N04S6N006 数据手册

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IAUC120N04S6N006  
OptiMOS- 6 Power-Transistor  
Product Summary  
VDS  
40  
0.6  
120  
V
RDS(on),max  
ID  
mW  
A
Features  
PG-TDSON-8-53  
• OptiMOS™ - power MOSFET for automotive applications  
• N-channel - Enhancement mode - Normal Level  
• AEC Q101 qualified  
1
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
1
Type  
Package  
Marking  
IAUC120N04S6N006  
PG-TDSON-8-53 6N04N006  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
VGS=10V,  
Chip Limitation1,2)  
VGS=10V,  
DC current3)  
Unit  
I D  
Drain current  
405  
120  
55  
A
Ta=85°C, VGS=10V,  
RthJA on 2s2p4,5)  
Pulsed drain current5)  
I D,pulse  
EAS  
T C=25°C, t p =100µs  
1500  
750  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=60A, R G=25W  
mJ  
A
I AS  
R G=25W  
120  
VGS  
-
±20  
V
Ptot  
T C=25°C  
Power dissipation  
187  
W
°C  
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
Rev. 1.0  
page 1  
2020-06-05  

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