Datasheet > IAUC120N04S6L008

IAUC120N04S6L008

更新时间： 2024-11-07 11:14:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	201K
描述
车规级MOSFET

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中文翻译

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IAUC120N04S6L008 数据手册

IAUC120N04S6L008

OptiMOS^™- 6 Power-Transistor

Product Summary

V_DS

0.8

120

R_DS(on),max

I_D

m

Features

PG-TDSON-8

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Logic Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IAUC120N04S6L008

PG-TDSON-8

6N04L008

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

120

T _C=100°C, V_GS=10V²⁾

120

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

480

400

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=60A, R _G,min=25

I _AS

R _G,min=25

V_GS

±16

P_tot

T _C=25°C

Power dissipation

150

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2018-09-27

12 3 4 5 6 7...9

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