Datasheet > IAUC120N04S6L005

IAUC120N04S6L005

更新时间： 2024-11-19 14:54:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	939K
描述
A portfolio of 18 products (RDS (on)?max from 0,5 mΩ to 4.4 mΩ which enables the best product fit in the applications.

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IAUC120N04S6L005 数据手册

uper,

IAUC120N04S6L005

OptiMOS^™- 6 Power-Transistor

Product Summary

V_DS

R_DS(on),max

I_D

0.55

120

Features

PG-TDSON-8-53

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Logic Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IAUC120N04S6L005

PG-TDSON-8-53 6N04L005

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

V_GS=10V,

Chip Limitation^1,2)

V_GS=10V,

DC current³⁾

Unit

I _D

Drain current

435

120

T_a=85°C, V_GS=10V,

R_thJAon 2s2p^4,5)

Pulsed drain current⁵⁾

I _D,pulse

E_AS

T _C=25°C, t _p=100µs

1550

750

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=60A, R _G=25W

I _AS

R _G=25W

120

V_GS

±16

P_tot

T _C=25°C

Power dissipation

187

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2020-06-05

12 3 4 5 6 7...10

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